The determination of Si-SiO/sub 2/ interface trap density in irradiated four-terminal VDMOSFETs using charge pumping

S.C. Witczak; K.F. Galloway; R.D. Schrimpf; J.L. Titus; J.R. Brews; G. Prevost

doi:10.1109/23.556836

The determination of Si-SiO/sub 2/ interface trap density in irradiated four-terminal VDMOSFETs using charge pumping

IEEE Transactions on Nuclear Science ◽

10.1109/23.556836 ◽

1996 ◽

Vol 43 (6) ◽

pp. 2558-2564 ◽

Cited By ~ 67

Author(s):

S.C. Witczak ◽

K.F. Galloway ◽

R.D. Schrimpf ◽

J.L. Titus ◽

J.R. Brews ◽

...

Keyword(s):

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Charge Pumping

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Simultaneous Determination of Volume Trap Concentration and Interface Trap Density from C-Y Characteristics

10.1515/9783112472729-012 ◽

1971 ◽

pp. 407-410

Author(s):

K. Nienerowski ◽

E. - H. Weber

Keyword(s):

Simultaneous Determination ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Trap Concentration

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Extraction of interface trap density in high-k/Ge gate stacks and determination of the charge neutrality level

2009 Device Research Conference ◽

10.1109/drc.2009.5354888 ◽

2009 ◽

Author(s):

D. Bozyigit ◽

C. Rossel

Keyword(s):

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Gate Stacks ◽

Charge Neutrality ◽

Charge Neutrality Level ◽

High K

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Effects of Fowler-Nordheim stress on interface trap density and emission cross sections in n-MOSFETs studied by three-level charge pumping

IEEE Electron Device Letters ◽

10.1109/55.491841 ◽

1996 ◽

Vol 17 (5) ◽

pp. 239-241 ◽

Cited By ~ 4

Author(s):

Xiao-Jie Yuan ◽

M. Kivi ◽

S. Taylor ◽

P. Hurley

Keyword(s):

Cross Sections ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Charge Pumping

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Comparison of interface trap density measured by capacitance/subthreshold/charge-pumping methods for n-MOSFETs with Si-implanted gate-SiO/sub 2/

ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153) ◽

10.1109/icmts.2001.928639 ◽

2002 ◽

Cited By ~ 1

Author(s):

T. Matsuda ◽

R. Takezawa ◽

K. Arakawa ◽

M. Yasuda ◽

T. Ohzone ◽

...

Keyword(s):

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Charge Pumping

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Charge Pumping Measurements of Radiation-Induced Interface-Trap Density in Floating-Body SOI FinFETs

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2012.2222443 ◽

2012 ◽

Vol 59 (6) ◽

pp. 3062-3068 ◽

Cited By ~ 7

Author(s):

E. X. Zhang ◽

D. M. Fleetwood ◽

G. X. Duan ◽

C. X. Zhang ◽

S. A. Francis ◽

...

Keyword(s):

Trap Density ◽

Floating Body ◽

Interface Trap Density ◽

Interface Trap ◽

Charge Pumping ◽

Radiation Induced

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Extraction of Interface Trap Density Through Synchronized Optical Charge Pumping in Gate-All-Around MOSFETs

IEEE Electron Device Letters ◽

10.1109/led.2020.3022025 ◽

2020 ◽

Vol 41 (11) ◽

pp. 1629-1632

Author(s):

Geon-Beom Lee ◽

Yang-Kyu Choi

Keyword(s):

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Charge Pumping ◽

Optical Charge

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Determination of minority carrier lifetime and interface trap density in Ge MIS capacitors

2007 International Workshop on Physics of Semiconductor Devices ◽

10.1109/iwpsd.2007.4472481 ◽

2007 ◽

Author(s):

C. Mahata ◽

M. K. Bera ◽

P. K. Bose ◽

C. K. Maiti

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Mis Capacitors

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Determination of Si-SiO/sub 2/ interface trap density by 1/f noise measurements

IEEE Transactions on Electron Devices ◽

10.1109/16.7368 ◽

1988 ◽

Vol 35 (10) ◽

pp. 1651-1655 ◽

Cited By ~ 59

Author(s):

Z. Celik-Butler ◽

T.Y. Hsiang

Keyword(s):

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Noise Measurements

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On the extraction of interface trap density in the Pt/La2O3/Ge gate stack and the determination of the charge neutrality level in Ge

Journal of Applied Physics ◽

10.1063/1.3155830 ◽

2009 ◽

Vol 105 (12) ◽

pp. 124521 ◽

Cited By ~ 3

Author(s):

D. Bozyigit ◽

C. Rossel

Keyword(s):

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Gate Stack ◽

Charge Neutrality ◽

Charge Neutrality Level

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Analysis of the Interface Trap Density in SOI FinFETs with Different TiN Gate Electrode Thickness through Charge Pumping Technique

ECS Transactions ◽

10.1149/1.3183764 ◽

2019 ◽

Vol 23 (1) ◽

pp. 559-565 ◽

Cited By ~ 1

Author(s):

Michele Rodrigues ◽

Moon Cho ◽

João A. Martino ◽

Nadine Collaert ◽

Abdelkarim Mercha ◽

...

Keyword(s):

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Gate Electrode ◽

Electrode Thickness ◽

Charge Pumping

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