Effects of Fowler-Nordheim stress on interface trap density and emission cross sections in n-MOSFETs studied by three-level charge pumping
Keyword(s):
Charge Pumping Measurements of Radiation-Induced Interface-Trap Density in Floating-Body SOI FinFETs
2012 ◽
Vol 59
(6)
◽
pp. 3062-3068
◽
Keyword(s):
Keyword(s):
Keyword(s):
Keyword(s):
1996 ◽
Vol 43
(6)
◽
pp. 2558-2564
◽
Keyword(s):
Keyword(s):
Keyword(s):