3D Interconnect Process Integration and Characterization of Back Side Illuminated CMOS Image Sensor with 1.75 μm Pixels

2009 ◽  
Vol 156 (6) ◽  
pp. J143 ◽  
Author(s):  
Sung Gyu Pyo ◽  
S. H. Park ◽  
Sibum Kim
Keyword(s):  
Process Integration ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Back Side

scholarly journals On Border Traps in Back-Side-Illuminated CMOS Image Sensor Oxides

2020 ◽  
Vol 67 (5) ◽  
pp. 2022-2027
Author(s):  
Andrea Vici ◽  
Felice Russo ◽  
Nicola Lovisi ◽  
Fernanda Irrera
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Back Side

Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI

2018 ◽  
Author(s):  
Younggeun Ji ◽  
Jeonghoon Kim ◽  
Jungin Kim ◽  
Miji Lee ◽  
Jaeheon Noh ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor

Back-Side Illuminated CMOS Image Sensor Fabricated using Compliant Bump

2009 ◽  
Author(s):  
N. Watanabe ◽  
I. Tsunoda ◽  
T. Takao ◽  
K. Tanaka ◽  
T. Asano
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Back Side

Compliant bump technology for back-side illuminated CMOS image sensor

2009 ◽  
Author(s):  
Tanemasa Asano ◽  
Naoya Watanabe ◽  
Isao Tsunoda ◽  
Yasuhiro Kimiya ◽  
Katsuaki Fukunaga ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Back Side

Design and characterization of radiation tolerant CMOS image sensor for space applications

2011 ◽  
Author(s):  
Xinyang Wang ◽  
Jan Bogaerts ◽  
Werner Ogiers ◽  
Gerd Beeckman ◽  
Guy Meynants
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Space Applications ◽  
Radiation Tolerant

scholarly journals Back Side Illumination Image Sensor Characterization by Backside Circuit Editing

2021 ◽  
Author(s):  
Jian Yu ◽  
Jin Xu ◽  
Niel Sanico
Keyword(s):  
Electron Beam ◽  
Optical Imaging ◽  
Ion Beam ◽  
Image Sensor ◽  
Back Side ◽  
Novel Approach ◽  
Side Illumination

Abstract The characterization of Back Side Illumination (BSI) Image Sensor is challenging because of its unique construct with silicon on top. A novel approach for the BSI Image sensor characterization will be presented in this paper. The proposed approach utilizes the circuit editing through the silicon (backside) by ion beam and optical imaging. This technique allows access to the buried conductors and creates probe points for measurements, which are typically performed by an optical prober, electron beam prober or a mechanical micro/nano prober.

scholarly journals A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel

Sensors ◽  
2020 ◽  
Vol 20 (2) ◽  
pp. 486
Author(s):  
Ken Miyauchi ◽  
Kazuya Mori ◽  
Toshinori Otaka ◽  
Toshiyuki Isozaki ◽  
Naoto Yasuda ◽  
...  
Keyword(s):  
Dynamic Range ◽  
High Sensitivity ◽  
Cmos Image Sensor ◽  
Light Sensitivity ◽  
Image Sensor ◽  
Motion Artifacts ◽  
Oxide Semiconductor ◽  
Storage Capacitor ◽  
Cmos Process ◽  
Back Side

A backside-illuminated complementary metal-oxide-semiconductor (CMOS) image sensor with 4.0 μm voltage domain global shutter (GS) pixels has been fabricated in a 45 nm/65 nm stacked CMOS process as a proof-of-concept vehicle. The pixel components for the photon-to-voltage conversion are formed on the top substrate (the first layer). Each voltage signal from the first layer pixel is stored in the sample-and-hold capacitors on the bottom substrate (the second layer) via micro-bump interconnection to achieve a voltage domain GS function. The two sets of voltage domain storage capacitor per pixel enable a multiple gain readout to realize single exposure high dynamic range (SEHDR) in the GS operation. As a result, an 80dB SEHDR GS operation without rolling shutter distortions and motion artifacts has been achieved. Additionally, less than −140dB parasitic light sensitivity, small noise floor, high sensitivity and good angular response have been achieved.

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