Design and characterization of radiation tolerant CMOS image sensor for space applications

2011 ◽  
Author(s):  
Xinyang Wang ◽  
Jan Bogaerts ◽  
Werner Ogiers ◽  
Gerd Beeckman ◽  
Guy Meynants
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Space Applications ◽  
Radiation Tolerant

Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI

2018 ◽  
Author(s):  
Younggeun Ji ◽  
Jeonghoon Kim ◽  
Jungin Kim ◽  
Miji Lee ◽  
Jaeheon Noh ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor

Design of a radiation tolerant CMOS image sensor

2011 ◽  
Author(s):  
Xinyuan Qian ◽  
Hang Yu ◽  
Bo Zhao ◽  
Shoushun Chen ◽  
Kay Soon Low
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Radiation Tolerant

Direct sapphire to ceramic bonding for CMOS image sensor packaging using room temperature bonding technology

2017 ◽  
Vol 2017 (1) ◽  
pp. 000406-000410
Author(s):  
H. Lundén ◽  
A. Määttänen ◽  
L. Murphy
Keyword(s):  
Room Temperature ◽  
Environmental Changes ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Medical Implants ◽  
High Radiation ◽  
Sensor Devices ◽  
Bonding Technology ◽  
Radiation Tolerant ◽  
Bonding Technique

Abstract The aim of the study was to evaluate the use of a novel bonding technology to create a sapphire-ceramic package for CMOS image sensor devices. The package must be robust enough to be used in space flight applications: it must protect the device from external environmental conditions during testing, storage and use. A series of tests were executed to ensure the package quality. The package needs to be radiation-tolerant to ensure reliability of data in high radiation environments, such as in space. Package hermeticity is an important reliability requirement not only in space but also in other applications such as medical implants, military, nuclear inspection and telecoms. It was proved that novel bonding technique enables direct sapphire to ceramic bonding: robust packages were manufactured. A significant improvement in moisture levels was observed compared to (typically)epoxy sealed packages: detected moisture levels were of only one tenth of what is commonly seen in the stressed image sensor packages. Environmental changes had no influence on the package & device functionality or quality.

scholarly journals A High Full Well Capacity CMOS Image Sensor for Space Applications

Sensors ◽  
2019 ◽  
Vol 19 (7) ◽  
pp. 1505 ◽  
Author(s):  
Woo-Tae Kim ◽  
Cheonwi Park ◽  
Hyunkeun Lee ◽  
Ilseop Lee ◽  
Byung-Geun Lee
Keyword(s):  
Modulation Transfer Function ◽  
Incident Light ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Damage Effect ◽  
Modulation Transfer ◽  
Incident Light Intensity ◽  
Space Applications ◽  
Mos Capacitor ◽  
Pixel Pitch

This paper presents a high full well capacity (FWC) CMOS image sensor (CIS) for space applications. The proposed pixel design effectively increases the FWC without inducing overflow of photo-generated charge in a limited pixel area. An MOS capacitor is integrated in a pixel and accumulated charges in a photodiode are transferred to the in-pixel capacitor multiple times depending on the maximum incident light intensity. In addition, the modulation transfer function (MTF) and radiation damage effect on the pixel, which are especially important for space applications, are studied and analyzed through fabrication of the CIS. The CIS was fabricated using a 0.11 μm 1-poly 4-metal CIS process to demonstrate the proposed techniques and pixel design. A measured FWC of 103,448 electrons and MTF improvement of 300% are achieved with 6.5 μm pixel pitch.

Characterization of LTO coating on microlens of CMOS image sensor

2010 ◽  
Author(s):  
J. Gambino ◽  
B. Leidy ◽  
C. Musante ◽  
K. Ackerson ◽  
B. Guthrie ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor
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