Characterization of the per-pixel dark current and activation energy of a large format CMOS image sensor

2018 ◽  
Author(s):  
Swaraj Bandhu Mahato ◽  
Joris De Ridder ◽  
Guy Meynants ◽  
Gert Raskin ◽  
Hans Van Winckel
Keyword(s):  
Activation Energy ◽  
Dark Current ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Large Format

Research status of dark current in CMOS image sensor

2021 ◽  
Author(s):  
Lei Yan ◽  
feng shi ◽  
hongchang cheng ◽  
ye yang ◽  
bin ren ◽  
...  
Keyword(s):  
Dark Current ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Research Status

scholarly journals Phosphorus Versus Arsenic: Role of the Photodiode Doping Element in CMOS Image Sensor Radiation-Induced Dark Current and Random Telegraph Signal

2020 ◽  
Vol 67 (7) ◽  
pp. 1241-1250
Author(s):  
Alexandre Le Roch ◽  
Cedric Virmontois ◽  
Philippe Paillet ◽  
Jean-Marc Belloir ◽  
Serena Rizzolo ◽  
...  
Keyword(s):  
Dark Current ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Random Telegraph Signal ◽  
Doping Element ◽  
Radiation Induced

Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI

2018 ◽  
Author(s):  
Younggeun Ji ◽  
Jeonghoon Kim ◽  
Jungin Kim ◽  
Miji Lee ◽  
Jaeheon Noh ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor

Design and characterization of radiation tolerant CMOS image sensor for space applications

2011 ◽  
Author(s):  
Xinyang Wang ◽  
Jan Bogaerts ◽  
Werner Ogiers ◽  
Gerd Beeckman ◽  
Guy Meynants
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Space Applications ◽  
Radiation Tolerant

scholarly journals Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers

Sensors ◽  
2020 ◽  
Vol 20 (22) ◽  
pp. 6620
Author(s):  
Ayumi Onaka-Masada ◽  
Takeshi Kadono ◽  
Ryosuke Okuyama ◽  
Ryo Hirose ◽  
Koji Kobayashi ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Oxygen Concentration ◽  
Epitaxial Layer ◽  
Dark Current ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Device Fabrication ◽  
White Spot ◽  
Epitaxial Silicon ◽  
Ion Implanted

The impact of hydrocarbon-molecular (C3H6)-ion implantation in an epitaxial layer, which has low oxygen concentration, on the dark characteristics of complementary metal-oxide-semiconductor (CMOS) image sensor pixels was investigated by dark current spectroscopy. It was demonstrated that white spot defects of CMOS image sensor pixels when using a double epitaxial silicon wafer with C3H6-ion implanted in the first epitaxial layer were 40% lower than that when using an epitaxial silicon wafer with C3H6-ion implanted in the Czochralski-grown silicon substrate. This considerable reduction in white spot defects on the C3H6-ion-implanted double epitaxial silicon wafer may be due to the high gettering capability for metallic contamination during the device fabrication process and the suppression effects of oxygen diffusion into the device active layer. In addition, the defects with low internal oxygen concentration were observed in the C3H6-ion-implanted region of the double epitaxial silicon wafer after the device fabrication process. We found that the formation of defects with low internal oxygen concentration is a phenomenon specific to the C3H6-ion-implanted double epitaxial wafer. This finding suggests that the oxygen concentration in the defects being low is a factor in the high gettering capability for metallic impurities, and those defects are considered to directly contribute to the reduction in white spot defects in CMOS image sensor pixels.

A low power global shutter pixel with extended FD voltage swing range for large format high speed CMOS image sensor

2015 ◽  
Vol 58 (4) ◽  
pp. 1-10
Author(s):  
YangFan Zhou ◽  
ZhongXiang Cao ◽  
Ye Han ◽  
QuanLiang Li ◽  
Cong Shi ◽  
...  
Keyword(s):  
Low Power ◽  
High Speed ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Large Format ◽  
Voltage Swing
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