Ferromagnetism in Cu-Doped ZnO Films Prepared by Filtered Cathodic Vacuum Arc Technique

2019 ◽  
Vol 13 (3) ◽  
pp. 143-149
Author(s):  
Tun Seng Herng ◽  
Shu Ping Lau ◽  
Siu Fung Yu
2003 ◽  
Vol 763 ◽  
Author(s):  
H. W. Lee ◽  
Y. G. Wang ◽  
S. P. Lau ◽  
B. K. Tay

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.


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pp. 1597-1604 ◽  
Author(s):  
Y. G. Wang ◽  
S. P. Lau ◽  
H. W. Lee ◽  
S. F. Yu ◽  
B. K. Tay ◽  
...  

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...  

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