Structural, optical and electrical properties of N-doped ZnO thin films prepared by thermal oxidation of pulsed filtered cathodic vacuum arc deposited ZnxNy films

2011 ◽  
Vol 509 (36) ◽  
pp. 8922-8926 ◽  
Author(s):  
N.H. Erdogan ◽  
K. Kara ◽  
H. Ozdamar ◽  
H. Kavak ◽  
R. Esen ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Oxidation ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Optical And Electrical Properties ◽  
Doped Zno ◽  
Filtered Cathodic Vacuum Arc

Effect of O2partial pressure on optical and electrical properties in Al doped ZnO thin films

2014 ◽  
Vol 29 (5) ◽  
pp. 275-280 ◽  
Author(s):  
P. J. Cao ◽  
W. J. Liu ◽  
F. Jia ◽  
Y. X. Zeng ◽  
D. L. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Zno Thin Films ◽  
Optical And Electrical Properties ◽  
Doped Zno

RF Magnetron Sputtering Processed Transparent Conductive Aluminum Doped ZnO thin Films with Excellent Optical and Electrical Properties

2021 ◽  
Author(s):  
Chunhu Zhao ◽  
Junfeng Liu ◽  
Yixin Guo ◽  
Yanlin Pan ◽  
Xiaobo Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Band Model ◽  
Deposition Condition ◽  
Optical And Electrical Properties ◽  
Doped Zno

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.

The effects of Ti concentration on the structure, optical, and electrical properties of Al and Ti co-doped ZnO thin films

Optik ◽  
2016 ◽  
Vol 127 (11) ◽  
pp. 4645-4649 ◽  
Author(s):  
Akbar Davoodi ◽  
Mohammad Tajally ◽  
Omid Mirzaee ◽  
Akbar Eshaghi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Zno Thin Films ◽  
Optical And Electrical Properties ◽  
Doped Zno ◽  
Co Doped
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