Room temperature deposition of p-type arsenic doped ZnO polycrystalline films by laser-assist filtered cathodic vacuum arc technique

2007 ◽  
Vol 101 (9) ◽  
pp. 094905 ◽  
Author(s):  
Clement Yuen ◽  
S. F. Yu ◽  
E. S. P. Leong ◽  
S. P. Lau ◽  
K. Pita ◽  
...  
Keyword(s):  
Room Temperature ◽  
Vacuum Arc ◽  
Polycrystalline Films ◽  
Temperature Deposition ◽  
Doped Zno ◽  
Filtered Cathodic Vacuum Arc ◽  
P Type

Tetrahedral Amorphous Carbon Thin Film Transistors

1996 ◽  
Vol 423 ◽  
Author(s):  
F. J. Clough ◽  
B. Kleinsorge ◽  
W. I. Milne ◽  
J. Robertson
Keyword(s):  
Thin Film ◽  
Amorphous Carbon ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Vacuum Arc ◽  
Tetrahedral Amorphous Carbon ◽  
Undoped Material ◽  
Filtered Cathodic Vacuum Arc ◽  
P Type ◽  
Amorphous Carbon Thin Film

AbstractThis paper describes the design and fabrication of a carbon based thin film transistor (TFT). The active layer is formed from a novel form of amorphous carbon (a-C) known as tetrahedrally bonded amorphous carbon (ta-C) which can be deposited at room temperature using a filtered cathodic vacuum arc (FCVA) technique. In its ‘as grown’ condition, ta-C is p-type and the devices described here, produced using undoped material, exhibit p-channel operation.

scholarly journals Room temperature deposition of highly dense TiO2thin films by filtered cathodic vacuum arc

2015 ◽  
Author(s):  
E. Guillén ◽  
I. Heras ◽  
G. Rincón Llorente ◽  
F. Lungwitz ◽  
M. Alcon-Camas ◽  
...  
Keyword(s):  
Room Temperature ◽  
Vacuum Arc ◽  
Temperature Deposition ◽  
Filtered Cathodic Vacuum Arc

Low Temperature Deposition of Zinc Oxide Films

2003 ◽  
Vol 763 ◽  
Author(s):  
H. W. Lee ◽  
Y. G. Wang ◽  
S. P. Lau ◽  
B. K. Tay
Keyword(s):  
Zinc Oxide ◽  
Carrier Concentration ◽  
Vacuum Arc ◽  
Zno Films ◽  
Al Alloy ◽  
Pure Zinc ◽  
Zinc Oxide Films ◽  
Alloy Target ◽  
Temperature Deposition ◽  
Filtered Cathodic Vacuum Arc

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

Ferromagnetism in Cu-Doped ZnO Films Prepared by Filtered Cathodic Vacuum Arc Technique

2019 ◽  
Vol 13 (3) ◽  
pp. 143-149
Author(s):  
Tun Seng Herng ◽  
Shu Ping Lau ◽  
Siu Fung Yu
Keyword(s):  
Vacuum Arc ◽  
Zno Films ◽  
Doped Zno ◽  
Filtered Cathodic Vacuum Arc

scholarly journals Room temperature p-type conductivity and coexistence of ferroelectric order in ferromagnetic Li doped ZnO nanoparticles

2014 ◽  
Vol 116 (16) ◽  
pp. 164109 ◽  
Author(s):  
Saif Ullah Awan ◽  
S. K. Hasanain ◽  
D. H. Anjum ◽  
M. S. Awan ◽  
Saqlain A. Shah
Keyword(s):  
Zno Nanoparticles ◽  
Room Temperature ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type ◽  
Ferroelectric Order

scholarly journals Room temperature deposition of highly conductive and transparent H and W co-doped ZnO film

2013 ◽  
Vol 62 (1) ◽  
pp. 017803
Author(s):  
Wang Yan-Feng ◽  
Zhang Xiao-Dan ◽  
Huang Qian ◽  
Liu Yang ◽  
Wei Chang-Chun ◽  
...  
Keyword(s):  
Room Temperature ◽  
Zno Film ◽  
Temperature Deposition ◽  
Doped Zno ◽  
Co Doped
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