n-Channel GaAs MOSFET with TaN∕HfAlO Gate Stack Formed Using In Situ Vacuum Anneal and Silane Passivation

2008 ◽  
Vol 155 (7) ◽  
pp. H464 ◽  
Author(s):  
Hock-Chun Chin ◽  
Ming Zhu ◽  
Ganesh S. Samudra ◽  
Yee-Chia Yeo
Keyword(s):  
Gate Stack ◽  
Vacuum Anneal

In Situ Pulsed Laser Deposition of Nd1.85Ce0.15Cu04−y

1990 ◽  
Vol 191 ◽  
Author(s):  
J. S. Horwitz ◽  
D. B. Chrisey ◽  
M. S. Osofsky ◽  
K. S. Grabowski ◽  
T. A. Vanderah
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Slow Cooling ◽  
High Background ◽  
Composition And Structure ◽  
Vacuum Anneal ◽  
Krf Excimer Laser ◽  
Substrate Temperatures

ABSTRACTWe have deposited thin films of the electron-doped, high temperature superconductor Nd1.85Ce0.15CuO4−y by pulsed laser deposition. Films were deposited from a stoichiometric target using a KrF excimer laser (248 nm, 250 mJ/pulse, −2 J/cm2) as a function of substrate temperature, oxygen pressure and vacuum anneal conditions. The film composition and structure, as determined by RBS and XRD, were very sensitive to the deposition and subsequent anneal conditions. Stoichiometric films were deposited at low substrate temperatures (740 °C) but contained other orientations and phases. Predominantly c-axis oriented films were formed at high substrate temperatures (900 °C) and high background pressures of oxygen (200 mtorr). These films were semiconducting when quenched on oxygen or nitrogen following deposition. Slow cooling in a vacuum, yielded superconducting films with a maximum Tc-(onset) of 15 K and Tc(R=0) of 11 K. A variation of the deposition and anneal conditions indicated that loss of copper competed with the optimization of the carrier concentration.

scholarly journals Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

2013 ◽  
Vol 114 (15) ◽  
pp. 154108 ◽  
Author(s):  
Varistha Chobpattana ◽  
Thomas E. Mates ◽  
William J. Mitchell ◽  
Jack Y. Zhang ◽  
Susanne Stemmer
Keyword(s):  
Surface Cleaning ◽  
Gate Stack ◽  
Cleaning Procedures

In-Situ Deposition of High-k Gate Stack on InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with Low Equivalent Oxide Thickness

2019 ◽  
Vol 11 (4) ◽  
pp. 431-439 ◽  
Author(s):  
Rama Kambhampati ◽  
Sergei Koveshnikov ◽  
Vadim Tokranov ◽  
M. Yakimov ◽  
R Moore ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Equivalent Oxide Thickness ◽  
Gate Stack ◽  
In Situ Deposition ◽  
High K

Al2O3/GeOx gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method

2014 ◽  
Vol 105 (9) ◽  
pp. 092101 ◽  
Author(s):  
Xu Yang ◽  
Sheng-Kai Wang ◽  
Xiong Zhang ◽  
Bing Sun ◽  
Wei Zhao ◽  
...  
Keyword(s):  
Gate Stack ◽  
Ozone Oxidation ◽  
Oxidation Method ◽  
Germanium Substrate
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