In Situ Pulsed Laser Deposition of Nd1.85Ce0.15Cu04−y

1990 ◽  
Vol 191 ◽  
Author(s):  
J. S. Horwitz ◽  
D. B. Chrisey ◽  
M. S. Osofsky ◽  
K. S. Grabowski ◽  
T. A. Vanderah
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Slow Cooling ◽  
High Background ◽  
Composition And Structure ◽  
Vacuum Anneal ◽  
Krf Excimer Laser ◽  
Substrate Temperatures

ABSTRACTWe have deposited thin films of the electron-doped, high temperature superconductor Nd1.85Ce0.15CuO4−y by pulsed laser deposition. Films were deposited from a stoichiometric target using a KrF excimer laser (248 nm, 250 mJ/pulse, −2 J/cm2) as a function of substrate temperature, oxygen pressure and vacuum anneal conditions. The film composition and structure, as determined by RBS and XRD, were very sensitive to the deposition and subsequent anneal conditions. Stoichiometric films were deposited at low substrate temperatures (740 °C) but contained other orientations and phases. Predominantly c-axis oriented films were formed at high substrate temperatures (900 °C) and high background pressures of oxygen (200 mtorr). These films were semiconducting when quenched on oxygen or nitrogen following deposition. Slow cooling in a vacuum, yielded superconducting films with a maximum Tc-(onset) of 15 K and Tc(R=0) of 11 K. A variation of the deposition and anneal conditions indicated that loss of copper competed with the optimization of the carrier concentration.

Pulsed Laser Deposition of High Quality ZnO Thin Films

1992 ◽  
Vol 285 ◽  
Author(s):  
S. Amirhaghi ◽  
V. Craciun ◽  
F. Beech ◽  
M. Vickers ◽  
S. Tarling ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Visible Region ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Krf Excimer Laser ◽  
Substrate Temperatures ◽  
532 Nm

ABSTRACTThin films of ZnO have been grown on silicon and glass substrates by the pulsed laser deposition method. The effects of the oxygen partial pressure, substrate temperature and laser wavelength on the structural and optical properties of the films have been studied. The KrF excimer laser (at 248 nm) was found to produce better quality thin films than the frequency doubled Nd:YAG laser (532 nm). Layers produced at substrate temperatures as low as 300°C were c-axis oriented with a FWHM value for the 002 XRD reflection less than 0.2° and exhibited optical transmission higher than 80% in the visible region.

Characteristics of ultraviolet-assisted pulsed-laser-deposited Y2O3 thin films

2000 ◽  
Vol 15 (2) ◽  
pp. 488-494 ◽  
Author(s):  
V. Craciun ◽  
E. S. Lambers ◽  
N. D. Bassim ◽  
R. K. Singh ◽  
D. Craciun
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structural And Optical Properties ◽  
Uv Illumination ◽  
Substrate Temperatures

The properties of thin Y2O3 films grown using an in situ ultraviolet (UV)-assisted pulsed laser deposition (PLD) technique were studied. With respect to Y2O3 films grown by conventional PLD under similar conditions but without UV illumination, the UVPLD-grown films exhibited better structural and optical properties, especially for lower substrate temperatures, from 340 to 400 °C. These layers were highly crystalline and textured along the (111) direction, and their refractive index values were similar to those of reference Y2O3 layers. They also exhibited a better stoichiometry and contained less physisorbed oxygen than the conventional PLD-grown layers.

X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES ON THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS SYNTHESIZED BY PULSED LASER DEPOSITION WITH DIFFERENT SUBSTRATE TEMPERATURES

2005 ◽  
Vol 12 (02) ◽  
pp. 185-195
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
Substrate Temperatures

Amorphous carbon nitride films ( a-CN x) were deposited by pulsed laser deposition of camphoric carbon target with different substrate temperatures (ST). The influence of ST on the synthesis of a-CN x films was investigated. The nitrogen-to-carbon (N/C) and oxygen-to-carbon (O/C) atomic ratios, bonding state, and microstructure of the deposited a-CN x films were characterized by X-ray photoelectron spectroscopy and were confirmed by other standard measurement techniques. The bonding states between C and N , and C and O in the deposited films were found to be significantly influenced by ST during the deposition process. The N/C and O/C atomic ratios of the a-CN x films reached the maximum value at 400°C. ST of 400°C was proposed to promote the desired sp 3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N , C=N and C≡N were observed in the films.

Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Yttrium Oxide ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

In situ monitoring of electrical resistivity and plasma during pulsed laser deposition growth of ultra-thin silver films

2021 ◽  
Vol 130 (8) ◽  
pp. 085301
Author(s):  
M. Novotný ◽  
P. Fitl ◽  
S. A. Irimiciuc ◽  
J. Bulíř ◽  
J. More-Chevalier ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
In Situ Monitoring ◽  
Laser Deposition ◽  
Silver Films

In-situ reflectivity measurements during pulsed-laser deposition of Bi2Sr2CaCu2O8+δ

1996 ◽  
pp. 721-725
Author(s):  
Alfons Ritzer ◽  
B. Falkner ◽  
S.T. Li ◽  
D. Bäuerle
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

scholarly journals The Properties of Zn-Doped AlSb Thin Films Prepared by Pulsed Laser Deposition

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 136
Author(s):  
Ping Tang ◽  
Weimin Wang ◽  
Bing Li ◽  
Lianghuan Feng ◽  
Guanggen Zeng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Photovoltaic Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Sem Images ◽  
Glass Substrates ◽  
Substrate Temperatures

Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.

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