Leakage Current Mechanisms in Epitaxial Gd[sub 2]O[sub 3] High-k Gate Dielectrics

2008 ◽  
Vol 11 (3) ◽  
pp. G12 ◽  
Author(s):  
H. D. B. Gottlob ◽  
T. J. Echtermeyer ◽  
M. Schmidt ◽  
T. Mollenhauer ◽  
T. Wahlbrink ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
High K

Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics

2005 ◽  
Author(s):  
Kenji OKADA ◽  
Hiroyuki OTA ◽  
Tsuyoshi HORIKAWA ◽  
Yasuyuki TAMURA ◽  
Takaoki SASAKI ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
Noise Analysis ◽  
Lifetime Prediction ◽  
Current Noise ◽  
High K

The Effect of Ternary Material (Zr, Y, and O) High-k Gate Dielectrics

2013 ◽  
Vol 699 ◽  
pp. 422-425 ◽  
Author(s):  
K.C. Lin ◽  
C.H. Chou ◽  
J.Y. Chen ◽  
C.J. Li ◽  
J.Y. Huang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electrical Property ◽  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Gate Dielectrics ◽  
Bottom Layer ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
High K

In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y2O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.

Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics

2015 ◽  
Vol 55 (11) ◽  
pp. 2198-2202 ◽  
Author(s):  
K.C. Lin ◽  
P.C. Juan ◽  
C.H. Liu ◽  
M.C. Wang ◽  
C.H. Chou
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
High K ◽  
Leakage Current Mechanism ◽  
Current Mechanism

Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment

2020 ◽  
Vol 109 ◽  
pp. 104933
Author(s):  
Kuei-Wen Huang ◽  
Teng-Jan Chang ◽  
Chun-Yuan Wang ◽  
Sheng-Han Yi ◽  
Chin-I. Wang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer By Layer ◽  
High K

Annealing effect and leakage current transport mechanisms of high k ternary GdAlOx gate dielectrics

2019 ◽  
Vol 791 ◽  
pp. 839-846 ◽  
Author(s):  
Shuan Li ◽  
Yanqing Wu ◽  
Hongen Yu ◽  
Kai Fu ◽  
Jie Zheng ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
Annealing Effect ◽  
Current Transport ◽  
Transport Mechanisms ◽  
High K

Thermally Grown and Reoxidized Nitrides as Alternative Gate Dielectrics

2003 ◽  
Vol 786 ◽  
Author(s):  
Alexandra Ludsteck ◽  
Waltraud Dietl ◽  
Hinyiu Chung ◽  
Joerg Schulze ◽  
Zsolt Nenyei ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
Interface State ◽  
Boron Diffusion ◽  
Gate Stacks ◽  
Process Gas ◽  
High K ◽  
Current Densities ◽  
High K Materials ◽  
Thermal Nitridation

ABSTRACTThe use of high-k materials as gate dielectric still meets a lot of unsolved problems such as thermal instability during post deposition anneals resulting in the formation of interfacial oxide layers or bad process compatibility. As long as these requirements are not accomplished alternative gate dielectrics have to be formed by oxynitrides or gate stacks built of oxynitrides and some high-k material. In order to achieve a low equivalent oxide thickness (EOT) it is necessary to grow homogeneously thin oxynitrides which are nitrogen-rich and which have a high interface quality. Therefore we have studied the growth of thin nitrides and oxynitrides (EOT = 1 – 2nm) formed by rapid thermal nitridation in NH3 and wet reoxidation. By varying the partial pressure of NH3 in the process gas ambient NH3/Ar the nitride quality could be optimized: it was found that an optimized ratio of NH3 and Ar during nitridation improves the electrical properties of the nitrides and oxynitrides significantly. Interface state densities as low as those of dry thermal oxides and leakage current densities reduced by four orders of magnitude compared to SiO2 of the same EOT have been obtained. Due to the high incorporation of nitrogen into the oxynitride by rapid thermal nitridation and following oxidation the leakage current densities are also lower than those of most oxynitrides reported in literature. In addition we present data concerning the suppression of boron diffusion from p+ poly-Si electrodes. In summary the developed oxynitrides are suitable to bridge the gap between common SiO2 and new alternative gate dielectrics or to form gate stacks in combination with high-k materials.

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