Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics

2015 ◽  
Vol 55 (11) ◽  
pp. 2198-2202 ◽  
Author(s):  
K.C. Lin ◽  
P.C. Juan ◽  
C.H. Liu ◽  
M.C. Wang ◽  
C.H. Chou
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
High K ◽  
Leakage Current Mechanism ◽  
Current Mechanism

scholarly journals Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs

2020 ◽  
Vol 67 (7) ◽  
pp. 1381-1389
Author(s):  
C. Martinella ◽  
T. Ziemann ◽  
R. Stark ◽  
A. Tsibizov ◽  
K. O. Voss ◽  
...  
Keyword(s):  
Leakage Current ◽  
Heavy Ion ◽  
Single Event ◽  
Leakage Current Mechanism ◽  
Current Mechanism

Oxygen Stability and Leakage Current Mechanism in Ferroelectric La-Substituted Bi4Ti3O12Single Crystals

2005 ◽  
Vol 44 (9B) ◽  
pp. 6998-7002 ◽  
Author(s):  
Yuji Noguchi ◽  
Masayuki Soga ◽  
Masatake Takahashi ◽  
Masaru Miyayama
Keyword(s):  
Leakage Current ◽  
Leakage Current Mechanism ◽  
Current Mechanism

Leakage Current Mechanisms in Epitaxial Gd[sub 2]O[sub 3] High-k Gate Dielectrics

2008 ◽  
Vol 11 (3) ◽  
pp. G12 ◽  
Author(s):  
H. D. B. Gottlob ◽  
T. J. Echtermeyer ◽  
M. Schmidt ◽  
T. Mollenhauer ◽  
T. Wahlbrink ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
High K

Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics

2005 ◽  
Author(s):  
Kenji OKADA ◽  
Hiroyuki OTA ◽  
Tsuyoshi HORIKAWA ◽  
Yasuyuki TAMURA ◽  
Takaoki SASAKI ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
Noise Analysis ◽  
Lifetime Prediction ◽  
Current Noise ◽  
High K

The Effect of Ternary Material (Zr, Y, and O) High-k Gate Dielectrics

2013 ◽  
Vol 699 ◽  
pp. 422-425 ◽  
Author(s):  
K.C. Lin ◽  
C.H. Chou ◽  
J.Y. Chen ◽  
C.J. Li ◽  
J.Y. Huang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electrical Property ◽  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Gate Dielectrics ◽  
Bottom Layer ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
High K

In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y2O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.

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