Thermal Oxide Grown on High Index Silicon Wafers

2019 ◽  
Vol 3 (33) ◽  
pp. 9-14 ◽  
Author(s):  
Ramiro Rogelio Rodríguez ◽  
Wilfrido Calleja Arriaga ◽  
Francisco Javier De la Hidalga Wade ◽  
Pedro Rosales ◽  
Alfonso Torres ◽  
...  
Keyword(s):  
Silicon Wafers ◽  
High Index ◽  
Thermal Oxide

Bulk Micromachining of High Index Silicon Wafers and Possible Applications in Microchannels and Diffractive Elements

2007 ◽  
Author(s):  
W. Calleja-Arriaga ◽  
C. Zu´n˜iga-Islas ◽  
P. Rosales-Quintero ◽  
J. De la Hidalga-Wade ◽  
C. Reyes-Betanzo ◽  
...  
Keyword(s):  
Silicon Wafers ◽  
High Index ◽  
Experimental Procedure ◽  
Etching Pattern ◽  
Silicon Bulk ◽  
Fabrication Procedure ◽  
Long Time ◽  
Etching Mask ◽  
Crystallographic Planes

In this silicon bulk micromachining project we are evaluating new approaches to develop well-controlled 3-D microstructures for microfluidics and diffractive elements. Several approaches have been fabricated and reported using rectangular structures on (0 0 1) and (0 1 1) silicon wafers. In this work, n-type, 2–5 ohm-cm, two inch, 300 μ-thick, high index (1 1 3), (1 1 4), ( 5 5 12), (0 1 1) silicon wafers were used, which were produced from [1 1 2] ingots. Most micromachined structures compatible in Microsystems are fabricated on (0 0 1) and (0 1 1) wafers and rarely using high index wafers. Several sophisticated microstructures maybe fulfilled by using this kind of substrates with different crystallographic orientations. In our experimental work, the etching pattern was designed including several polygon-like structures to analyze the resulting morphology and crystallographic planes developed during a long-time etching. One of them, an array of 10 squared structures is arranged as follows: the first square is aligned parallel/perpendicular to the (0 1 1) main flat and then the next squares were slanted ranging from 5° till 45° in 5° steps. We have developed an experimental set using different KOH-H2O dilution at 60°C. All the experimental procedure was developed at the same time on (0 0 1) and (0 1 1) silicon wafers, which were used as control samples. Our etching mask containing several polygon-like structures was transferred parallel to the main (0 1 1) flat of the low and high index wafers. We are reporting the etching of several structures, watching the roughness evolution of the walls and bottom surfaces, with the main purpose of developing microstructures for microfluidics and integrated optics applications. In this way we have observed a couple of interesting structures whose very smooth walls could be used to develop a very simple fabrication procedure of blazed diffraction gratings for infrared applications.

On the roughness analysis of high-index silicon wafers using KOH-IPA solutions

2021 ◽  
Author(s):  
Hiram Enrique Martínez-Mateo ◽  
Francisco Javierr De la Hidalga ◽  
Carlos Zúñiga-Islas ◽  
Mario Moreno-Moreno ◽  
Joel Molina-Reyes ◽  
...  
Keyword(s):  
Silicon Wafers ◽  
High Index ◽  
Roughness Analysis

Chemical mechanical polishing of thermal oxide films using silica particles coated with ceria

2002 ◽  
Vol 17 (10) ◽  
pp. 2744-2749 ◽  
Author(s):  
Seung-Ho Lee ◽  
Zhenyu Lu ◽  
S. V. Babu ◽  
Egon Matijević
Keyword(s):  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Oxide Films ◽  
Silica Particles ◽  
Silicon Wafers ◽  
Mechanical Polishing ◽  
Thermal Oxide ◽  
Pure Ceria ◽  
Polish Rate

Thermal oxide covered silicon wafers were polished with slurries containing either nano-sized ceria (CeO2) or newly prepared uniform colloidal silica particles coated with ceria. The polish rate of the latter was significantly higher than that of pure ceria. The experiments were carried out using different concentrations of the abrasives at pH 4 and 10. Little effect on the polishing rates was noted when the conditions of the slurries were varied, which was explained by the compensation of two opposite polishing mechanisms.

The study of the thermal oxide films on silicon wafers by Fourier transform infrared attenuated total reflection spectroscopy

1990 ◽  
Vol 68 (4) ◽  
pp. 1429-1434 ◽  
Author(s):  
Yoshikatsu Nagasawa ◽  
Ichirou Yoshii ◽  
Kiyomi Naruke ◽  
Kazuhiko Yamamoto ◽  
Hideyuki Ishida ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Oxide Films ◽  
Fourier Transform Infrared ◽  
Silicon Wafers ◽  
Total Reflection ◽  
Attenuated Total Reflection ◽  
Reflection Spectroscopy ◽  
Thermal Oxide
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