Roughness of thermal oxide layers grown on ion implanted silicon wafers

1998 ◽  
Vol 16 (2) ◽  
pp. 619 ◽  
Author(s):  
Fabio Iacona
Keyword(s):  
Silicon Wafers ◽  
Oxide Layers ◽  
Thermal Oxide ◽  
Ion Implanted

Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD

2014 ◽  
Vol 395 ◽  
pp. 55-60 ◽  
Author(s):  
Xiaoye Wang ◽  
Xiaoguang Yang ◽  
Wenna Du ◽  
Haiming Ji ◽  
Shuai Luo ◽  
...  
Keyword(s):  
Oxide Layers ◽  
Thermal Oxide ◽  
Inas Nanowires

Thermal Oxide Grown on High Index Silicon Wafers

2019 ◽  
Vol 3 (33) ◽  
pp. 9-14 ◽  
Author(s):  
Ramiro Rogelio Rodríguez ◽  
Wilfrido Calleja Arriaga ◽  
Francisco Javier De la Hidalga Wade ◽  
Pedro Rosales ◽  
Alfonso Torres ◽  
...  
Keyword(s):  
Silicon Wafers ◽  
High Index ◽  
Thermal Oxide

scholarly journals Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2073 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
...  
Keyword(s):  
Dark Current ◽  
Image Sensor ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.

Determination of the Thickness of Sio2-Layers on Si by X-Ray Analysis and by X-Ray Photoelectron Spectroscopy

1979 ◽  
Vol 23 ◽  
pp. 223-230
Author(s):  
Maria F. Ebel ◽  
H. Ebel ◽  
J. Wernisch
Keyword(s):  
Photoelectron Spectroscopy ◽  
Count Rate ◽  
Silicon Wafers ◽  
Electron Spectrometer ◽  
Si Substrate ◽  
Oxide Layers ◽  
X Ray ◽  
Information Depth ◽  
Pass Through

It is feasible to investigate the thickness of oxide layers on silicon wafers by X-radiation in the 0.1-10 nm thickness range. For example, X-ray photoelectron spectroscopy (XPS) is a well applicable technique, with information depth of a few nm. Fig. 1 presents the principle of this method. An impinging characteristic X-radiation hν (e.g. Al Kα) count rate ejects Si 2p photoelectrons from the Si-substrate (d), with count rate n2, which, on their way to the electron spectrometer, have to pass through the SiOx-interface (c), the SiO2-layer (b) and the contamination overlayer (a), whereas Si 2p photoelectrons ejected from the SiO2-layer, with count rate n2 have just to penetrate the contamination overlayer. The Si 2p electrons originating from the SiOx-interface, for the situation shown in Fig. 1, can be added to the substrate count rate.

Anomalous Transient Diffusion of Ion Implanted Boron during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
Y. M. Kim ◽  
G. Q. Lo ◽  
D. L. Kwong ◽  
H. H. Tseng ◽  
R. Hance
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Anomalous Diffusion ◽  
Low Dose ◽  
Silicon Wafers ◽  
Silicon Ions ◽  
Defect Evolution ◽  
Boron Implantation ◽  
Silicon Implantation ◽  
Ion Implanted

ABSTRACTEffects of defect evolution during rapid thermal annealing (RTA) on the anomalous diffusion of ion implanted boron have been studied by implanting silicon ions prior to boron implantation with doses ranging from 1 × 1014cm−2 to 1 × 1016cm−2 at energies ranging from 20 to 150 KeV into silicon wafers. Diffusion of boron atoms implanted into a Si preamorphized layer during RTA is found to be anomalous in nature, and the magnitude of boron displacement depends on the RTA temperature. While RTA of preamorphized samples at 1150°C shows an enhanced boron displacement compared to that in crystalline samples, a reduced displacement is observed in preamorphized samples annealed by RTA at 1000°C. In addition, low dose pre-silicon implantation enhances the anomalous displacement significantly, especially at high RTA temperatures (1 150°C). Finally, the anomalous diffusion is found to depend strongly on the defect evolution during RTA.

Proximity gettering of C3H5carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, oxygen, and hydrogen impurities

2016 ◽  
Vol 55 (12) ◽  
pp. 121301 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryousuke Okuyama ◽  
Ryo Hirose ◽  
Ayumi Onaka-Masada ◽  
...  
Keyword(s):  
Transition Metal ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Cmos Image Sensors ◽  
Cluster Ion ◽  
Ion Implanted
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