Studies on CO[sub 2]-Based Slurries and Fluorinated Silica and Alumina Particles for Chemical Mechanical Polishing of Copper Films

2006 ◽  
Vol 153 (12) ◽  
pp. G1064 ◽  
Author(s):  
Pamela M. Visintin ◽  
Sean K. Eichenlaub ◽  
Lauren E. Portnow ◽  
Ruben G. Carbonell ◽  
Stephen P. Beaudoin ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Copper Films ◽  
Alumina Particles

Study on Chemical Mechanical Polishing Technology of Copper

2008 ◽  
Vol 373-374 ◽  
pp. 820-823
Author(s):  
Sheng Li Wang ◽  
Y.J. Yuan ◽  
Yu Ling Liu ◽  
X.H. Niu
Keyword(s):  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Alkali Concentration ◽  
Copper Films ◽  
Optimum Conditions ◽  
Slurry Flow Rate ◽  
Polishing Pressure ◽  
Oxidizer Concentration

Chemical mechanical polishing (CMP) of copper films in alkaline slurries was investigated. In the copper CMP, the slurry was made by adding colloidal silica abrasive to de-ionized water.The organic alkali was added to adjust the pH, H2O2 was used as an oxidizer.The effects of varying polishing temperature, polishing pressure, slurry flow rate, organic alkali concentration and oxidizer concentration on removal rate were investigated in order to determine the optimum conditions for those parameters. It is shown the chemical composition of the slurry was 2%~3% oxidizer concentration, 3% organic alkali concentration and proper amount surfactant is reasonable. The solid concentration of the polishing slurry was fixed at 20% by weight. The removal rate of copper could reach 700nm/min and the surface roughness after CMP was 0.49nm.

Use of Malonic Acid in Chemical-Mechanical Polishing ( CMP ) of Tungsten

1997 ◽  
Vol 477 ◽  
Author(s):  
L. Zhang ◽  
S. Raghavan
Keyword(s):  
Zeta Potential ◽  
Malonic Acid ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Small Scale ◽  
Ph Values ◽  
Particulate Contamination ◽  
Principal Objective ◽  
Alumina Particles ◽  
Negative Zeta Potential

ABSTRACTThe use of malonic acid as an additive in alumina slurries used for the chemical mechanical polishing ( CMP ) of tungsten has been explored for the reduction of particulate contamination. The principal objective of this work was to delineate conditions under which alumina contamination on polished surfaces could be reduced.The interaction between malonic acid and alumina particles has been investigated through electrokinetic and adsorption measurements. At suitable malonic acid concentrations and pH values, tungsten and alumina surfaces develop a negative zeta potential resulting in conditions conducive to reduced particulate contamination. Small scale polishing experiments have been carried out to relate electrokinetic results to the level of particulate contamination after polishing.

The Effects of Particle Adhesion in Chemical Mechanical Polishing

2003 ◽  
Vol 767 ◽  
Author(s):  
Zhenyu Lu ◽  
S.V. Babu ◽  
Egon Matijević
Keyword(s):  
Chemical Mechanical Polishing ◽  
Packed Column ◽  
Mechanical Polishing ◽  
Surface Films ◽  
Strong Correlations ◽  
Abrasive Particles ◽  
Spherical Silica ◽  
Alumina Particles ◽  
Slurry Flow Rate ◽  
Film Interface

AbstractThe properties of abrasive particles, and their interactions with surface films to be polished, play a key role in chemical mechanical polishing (CMP). This study applies the packed column technique for the investigation of the adhesion phenomena at the particle/film interface as a function of different slurry chemistries relevant to polishing processes. Well-defined dispersions, including uniform spherical silica and silica cores coated with nanosized ceria, as well as calcined alumina were used to represent slurry abrasives, and copper or glass beads to simulate wafers or discs. It was shown that the pH and slurry flow rate had significant effects on particle attachment and removal. The results of deposition of silica particles on copper beads in the presence of various concentrations of H2O2 and of detachment from copper beads of alumina particles, loaded at different pH values, had strong correlations to the polish rates of the metal.

Boron-Based Nanoparticles for Chemical-Mechanical Polishing of Copper Films

2012 ◽  
Vol 2 (1) ◽  
pp. P20-P25 ◽  
Author(s):  
Xingliang He ◽  
Sukbae Joo ◽  
Huaping Xiao ◽  
Hong Liang
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Copper Films

scholarly journals Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

2021 ◽  
Vol 11 (10) ◽  
pp. 4358
Author(s):  
Hanchul Cho ◽  
Taekyung Lee ◽  
Doyeon Kim ◽  
Hyoungjae Kim
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Shape Error ◽  
Profile Shape ◽  
Conditioning Process ◽  
Polishing Pad ◽  
Simulation Based ◽  
Diamond Conditioner ◽  
Pad Conditioning ◽  
Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

scholarly journals Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

2021 ◽  
Author(s):  
Peili Gao ◽  
Tingting Liu ◽  
Zhenyu Zhang ◽  
Fanning Meng ◽  
Run-Ping Ye ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Ordered Mesoporous ◽  
Mesoporous Structures
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