scholarly journals Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

2021 ◽  
Vol 11 (10) ◽  
pp. 4358
Author(s):  
Hanchul Cho ◽  
Taekyung Lee ◽  
Doyeon Kim ◽  
Hyoungjae Kim
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Shape Error ◽  
Profile Shape ◽  
Conditioning Process ◽  
Polishing Pad ◽  
Simulation Based ◽  
Diamond Conditioner ◽  
Pad Conditioning ◽  
Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

The Development of an Ultrasonic Head for CMP Pad Conditioning

2012 ◽  
Vol 500 ◽  
pp. 275-280
Author(s):  
Pei Lum Tso ◽  
Shi Guo Liu ◽  
J. C. Wang
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Machining Processes ◽  
Conditioning Process ◽  
Polishing Pad ◽  
Key Word ◽  
Ultrasonic Assisted ◽  
Ultrasonic Assisted Machining ◽  
Pad Conditioning ◽  
The Cost

The technology of ultrasonic assisted machining has been successfully used in many machining processes recently. Conditioning in the CMP not only can extending the life of the polishing pad but also improve process stability. In this paper we develop a brand new conditioning process with ultrasonic assisted conditioning UAC head for chemical mechanical polishing CMP process. The slurry came from inside the polishing spindle and had an independent cyclic system. As a result, this UAC device can remove polishing debris 4-6 times faster than conventional conditioning process. This conditioning process may even use water instead of slurry to reduce the cost of consumables of CMP. Key word: Chemical mechanical polishing CMP, Ultrasonic assisted conditioning UAC, Polishing Pad

Frictional Characterization of Chemical–Mechanical Polishing Pad Surface and Diamond Conditioner Wear

2008 ◽  
Vol 47 (8) ◽  
pp. 6282-6287 ◽  
Author(s):  
Yohei Yamada ◽  
Masanori Kawakubo ◽  
Osamu Hirai ◽  
Nobuhiro Konishi ◽  
Syuhei Kurokawa ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Polishing Pad ◽  
Diamond Conditioner

The effect of pad conditioning on planarization characteristics of chemical mechanical polishing (CMP) with ceria slurry

2005 ◽  
Vol 867 ◽  
Author(s):  
Yuichi Yamamoto ◽  
Takaaki Kozuki ◽  
Shunichi Shibuki ◽  
Keiichi Maeda ◽  
Yasuaki Inoue ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Conditioning Process ◽  
Pad Conditioning

AbstractA ceria-based in-situ conditioning process was successfully developed. A new single layered metal bonded conditioner was developed to solve problems encountered in implementing ceria based in-situ conditioning process. The planarity was significantly improved compared with that of conventional Ni-plated in-situ conditioning.

Wear of Polishing Pad and Pattern Optimization of Fixed Abrasive Pad

2010 ◽  
Vol 126-128 ◽  
pp. 82-87
Author(s):  
Mao Li ◽  
Yong Wei Zhu ◽  
Jun Li ◽  
Jian Feng Ye ◽  
Ji Long Fan
Keyword(s):  
Significant Role ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Wear Model ◽  
Uniform Pattern ◽  
Surface Accuracy ◽  
Polishing Pad ◽  
Fixed Abrasive Pad ◽  
Pad Wear ◽  
Fixed Abrasive

The polishing pad plays a significant role in the Chemical Mechanical Polishing (CMP) process and its wear influences the surface accuracy of the polished wafer. A new polishing pad wear model is introduced and the law of pad wear along the pad radius is discussed, thus a new FAP with optimized pattern is designed and prepared in order. The flatness of the wafer lapped with a uniform pattern pad and that with an optimized pattern was compared. Results show that the PV value of the latter is lower that of the former.

Blade Diamond Disk for Conditioning CMP Polishing Pad

2010 ◽  
Vol 97-101 ◽  
pp. 3-6 ◽  
Author(s):  
Ming Yi Tsai
Keyword(s):  
Surface Roughness ◽  
Epoxy Resin ◽  
Chemical Mechanical Polishing ◽  
Polycrystalline Diamond ◽  
Mechanical Polishing ◽  
Height Variation ◽  
Surface Textures ◽  
Diamond Disk ◽  
Diamond Conditioner ◽  
The Cost

A diamond conditioner or dresser is needed to regenerate the asperity structure of the pad and recover its designed ability in chemical mechanical polishing (CMP) process. In this paper a new design of diamond conditioner is made by shaping a sintered matrix of polycrystalline diamond (PCD) to form teethed blades. These blades are arranged and embedded in epoxy resin to make a designed penetration angle, called the blade diamond disk. The dressing characteristics of pad surface textures are studied by comparison with conventional diamond conditioner. It is found that the height variation of the diamond tip of blade diamond disk is significantly smaller than the conventional diamond disk. The dressing rate of blade diamond disk is lower than that of the conventional diamond disk, and hence the pad life is prolonged. As a result, reduction of the cost CMP is expected. In addition the pad surface roughness Ra of about 3.79μm is less than Ra of about 4.15μm obtained after dressing using a conventional diamond disk.

Analysis on the Contact Pressure Distribution of Chemical Mechanical Polishing by the Bionic Polishing Pad with Phyllotactic Pattern

2011 ◽  
Vol 215 ◽  
pp. 217-222 ◽  
Author(s):  
Y.S. Lv ◽  
Nan Li ◽  
Jun Wang ◽  
Tian Zhang ◽  
Min Duan ◽  
...  
Keyword(s):  
Pressure Distribution ◽  
Contact Pressure ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Boundary Edge ◽  
Contact Pressure Distribution ◽  
Element Analysis ◽  
Pressure Distributions ◽  
Polishing Pad

In order to make the contact pressure distribution of polishing wafer surface more uniform during chemical mechanical polishing (CMP), a kind of the bionic polishing pad with sunflower seed pattern has been designed based on phyllotaxis theory, and the contact model and boundary condition of CMP have been established. Using finite element analysis, the contact pressure distributions between the polishing pad and wafer have been obtained when polishing silicon wafer and the effects of the phyllotactic parameter of polishing pad on the contact pressure distribution are found. The results show that the uniformity of the contact pressure distribution can be improved and the singularity of the contact pressure in the boundary edge of polished wafer can be decreased when the reasonable phyllotactic parameters are selected.

Study on Groove Shape of CMP Polishing Pad: A Review

2012 ◽  
Vol 497 ◽  
pp. 278-283 ◽  
Author(s):  
Chun Lan Lou ◽  
Hai Yan Di ◽  
Qiang Fang ◽  
Tao Kong ◽  
Wei Feng Yao ◽  
...  
Keyword(s):  
Research And Development ◽  
Chemical Mechanical Polishing ◽  
Review Paper ◽  
Mechanical Polishing ◽  
Polishing Process ◽  
Critical Elements ◽  
Comprehensive View ◽  
Groove Shape ◽  
Polishing Pad ◽  
Chemical Mechanical Polishing Process

In the chemical mechanical polishing process (CMP) ，the groove shape of polishing pad is one of the most critical elements that directly influences the quality and efficiency of CMP. This review paper describes the basic patterns of groove shape and that the patterns shape of polishing pad how to effect on quality and efficiency of CMP. The effect comparison between various sorts of groove shape and their effects on polishing is described. It is intended to help reader to gain a more comprehensive view on groove shape of polishing pad, and to be instrumental for research and development new groove shape of polishing pad for CMP.

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