Experimental investigation into polishing of monocrystalline silicon wafer using double-disc chemical assisted magnetorheological finishing process

In the present work, a novel hybrid finishing process that combines the two preferred methods in industries, namely, chemical-mechanical polishing (CMP) and magneto-rheological finishing (MRF), has been used to polish monocrystalline silicon wafers. The experiments were carried out on an indigenously developed double-disc chemical assisted magnetorheological finishing (DDCAMRF) experimental setup. The central composite design (CCD) was used to plan the experiments in order to estimate the effect of various process factors, namely polishing speed, slurry flow rate, percentage CIP concentration, and working gap on the surface roughness ([Formula: see text]) by DDCAMRF process. The analysis of variance was carried out to determine and analyze the contribution of significant factors affecting the surface roughness of polished silicon wafer. The statistical investigation revealed that percentage CIP concentration with a contribution of 30.6% has the maximum influence on the process performance followed by working gap (21.4%), slurry flow rate (14.4%), and polishing speed (1.65%). The surface roughness of polished silicon wafers was measured by the 3 D optical profilometer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were carried out to understand the surface morphology of polished silicon wafer. It was found that the surface roughness of silicon wafer improved with the increase in polishing speed and slurry flow rate, whereas it was deteriorated with the increase in percentage CIP concentration and working gap.

Ballast Flow Characteristics of Discharging Pipeline in Shield Slurry System

We adopted two-way coupling of discrete and finite elements to examine the non-spherical ballast flow characteristics in a slurry pipe system during a shield project. In the study, we considered the slurry rheological property and the flake shape of the ballast. A ballast size between 17 and 32 mm under different slurry flow rates and ballast volumetric concentration conditions was investigated for determining the law through which the mass flow rate, detained mass percentage, and ballast distribution state are influenced. The results indicate that increasing slurry flow rate and the ballast volumetric concentration increase the mass flow rate; the influence of the latter is stronger. Increases in both in the slurry flow rate and the ballast volumetric concentration can reduce the detained mass percentage in the slurry discharging pipeline, whereas increasing the ballast size has the opposite effect. The increase in both the slurry flow rate and the ballast size changes the ballast motion state. Experiments verified the numerical lifting model of the ballast in the vertical pipeline. The measurements of the actual pipeline wall thickness verified that the simulation results regarding the ballast distribution were accurate.

Numerical Analysis of Slurry Flow and Contact Pressure in CMP Considering the Effects of Retaining Ring

Retaining ring which keeps the wafer in place is an essential component in chemical mechanical polishing. Meanwhile, it helps to reduce the edge exclusion region where the material removal rate deviates significantly from that of the central region of the wafer. However, it may increase the slurry flow resistance and hence decrease the slurry flow rate. For properly designing a retaining ring of reasonable structure, the effects of retaining ring on slurry flow and contact pressure distribution in CMP process are analyzed by the mixed elastohydrodynamic lubrication model. It is found that the slurry flow is sensitive to the protrusion height of retaining ring used in the first generation carrier. The same as the first generation carrier, the slurry flow is obviously reduced with increasing pressure acting on the retaining ring in the second generation carrier. In addition, the floating retaining ring used in the second generation CMP carrier has better performance and is more controllable than the fixed retaining ring used in the first generation CMP carrier.

Optimization of chemical mechanical polishing parameters on surface roughness of steel substrate with aluminum nanoparticles via Taguchi approach

Purpose – The purpose of this paper is to investigate the effects of abrasive contents, oxidizer contents, slurry flow rate and polishing time in achieving a mirror-like finish on polished surfaces. Chemical mechanical polishing (CMP) is now widely used in the aerospace industry for global planarization of large, high value-added components. Design/methodology/approach – Optimal parameters are applied in experimental trials performed to investigate the effects of abrasive contents, oxidizer contents, slurry flow rate and polishing time in achieving a mirror-like finish on polished surfaces. Taguchi design experiments are performed to optimize the parameters of CMP performed in steel specimens. Findings – Their optimization parameters were found out; the surface scratch, polishing fog and remaining particles were reduced; and the flatness of the steel substrate was guaranteed. The average roughness (Ra) of the surface was reduced to 6.7 nm under the following process parameters: abrasive content of 2 weight per cent, oxidizer content of 2 weight per cent, slurry flow rate of 100 ml/min and polishing time of 20 min. Originality/value – To meet the final process requirements, the CMP process must provide a good planarity, precise selectivity and a defect-free surface. Surface planarization of components used to fabricate aerospace devices is achieved by CMP process, which enables global planarization by combining chemical and mechanical interactions.

Chemical mechanical polishing of steel substrate using aluminum nanoparticles abrasive slurry

Purpose – Chemical mechanical polishing (CMP) has attracted much attention recently because of its importance as a nano-scale finishing process for high value-added large components that are used in the aerospace industry. The paper aims to discuss these issues. Design/methodology/approach – The characteristics of aluminum nanoparticles slurry including oxidizer, oxidizer contents, abrasive contents, slurry flow rate, and polishing time on aluminum nanoparticles CMP performance, including material removal amount and surface morphology were studied. Findings – Experimental results indicate that the CMP performance depends strongly on the oxidizer, oxidizer contents, and abrasive contents. Surface polished by slurries that contain nano-Al abrasives had a lower surface average roughness (Ra), lower topographical variations and less scratching. The material removal amount and the Ra were 124 and 7.61 nm with appropriate values of the process parameters of the oxidizer, oxidizer content, abrasive content, slurry flow rate and polishing time which were H2O2, 2 wt.%, 1 wt.%, 10 ml/min, 5 min, respectively. Originality/value – Based on SEM determinations of the process parameters for the polishing of the surfaces, the CMP mechanism was deduced preliminarily.

Study on Pipeline Self-Flowing Transportation of Cemented Tailing Fill Slurry Based on Fluent Software

The related calculation analysis and numerical simulation is the basis of filling pipeline design and installation. Based on characteristics testing of the filling material, the related calculation was performed on the filling slurry gravity transport by pipelines. Chosen pipeline whose diameter was 75 mm, the natural flowing speed can reach 2.6 m/s on condition of the highest concentration for 65%, which is greater than the critical velocity and can meet the needs of the production of the mine. Numerical simulation research shows that the flowing speed of system was relatively ideal, slurry flow rate of bend place has great change while pressure uniformity in the rest parts, and the pressure loss is 0.8 MPa. Therefore, it is capable to achieve gravity flow transporting.

Chemical Effect on the Material Removal Rate in the CMP of Silicon Wafers

This paper investigates the effects of some chemical factors on the material removal rate (MRR) in chemo-mechanical polishing (CMP) of Si (100) wafers. The CMP was carried out in alkaline slurry using alumina and ceria particles with hydrogen peroxide. When using the alumina particles, the MRR initially decreases with increasing the slurry pH value until pH = 9. Nevertheless, the application of the ceria particles increases the MRR before the pH of the slurry reaches 10. A higher slurry flow rate brings about a greater MRR.