scholarly journals Surface Modified Alumina Particles and Their Chemical Mechanical Polishing (CMP) Behavior on C-plane (0001) Sapphire Substrate

2017 ◽  
Vol 32 (10) ◽  
pp. 1109 ◽  
Author(s):  
WANG Wei-Lei ◽  
LIU Wei-Li ◽  
BAI Lin-Sen ◽  
SONG Zhi-Tang ◽  
HUO Jun-Chao
Keyword(s):  
Sapphire Substrate ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Modified Alumina ◽  
Alumina Particles ◽  
Surface Modified

Effect of Sr(OH)2 as a pH Regulator on Different Plane Sapphire Substrate Chemical Mechanical Polishing

2019 ◽  
Vol 8 (2) ◽  
pp. P63-P69 ◽  
Author(s):  
Da Yin ◽  
Xinhuan Niu ◽  
Liu Yang ◽  
Kai Zhang ◽  
Jianchao Wang ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing

Use of Malonic Acid in Chemical-Mechanical Polishing ( CMP ) of Tungsten

1997 ◽  
Vol 477 ◽  
Author(s):  
L. Zhang ◽  
S. Raghavan
Keyword(s):  
Zeta Potential ◽  
Malonic Acid ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Small Scale ◽  
Ph Values ◽  
Particulate Contamination ◽  
Principal Objective ◽  
Alumina Particles ◽  
Negative Zeta Potential

ABSTRACTThe use of malonic acid as an additive in alumina slurries used for the chemical mechanical polishing ( CMP ) of tungsten has been explored for the reduction of particulate contamination. The principal objective of this work was to delineate conditions under which alumina contamination on polished surfaces could be reduced.The interaction between malonic acid and alumina particles has been investigated through electrokinetic and adsorption measurements. At suitable malonic acid concentrations and pH values, tungsten and alumina surfaces develop a negative zeta potential resulting in conditions conducive to reduced particulate contamination. Small scale polishing experiments have been carried out to relate electrokinetic results to the level of particulate contamination after polishing.

Two-Step Chemical Mechanical Polishing of Sapphire Substrate

2010 ◽  
Vol 157 (6) ◽  
pp. H688 ◽  
Author(s):  
Zefang Zhang ◽  
Weili Liu ◽  
Zhitang Song ◽  
Xiaokai Hu
Keyword(s):  
Sapphire Substrate ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing

Studies on CO[sub 2]-Based Slurries and Fluorinated Silica and Alumina Particles for Chemical Mechanical Polishing of Copper Films

2006 ◽  
Vol 153 (12) ◽  
pp. G1064 ◽  
Author(s):  
Pamela M. Visintin ◽  
Sean K. Eichenlaub ◽  
Lauren E. Portnow ◽  
Ruben G. Carbonell ◽  
Stephen P. Beaudoin ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Copper Films ◽  
Alumina Particles

scholarly journals Contrast Experiments in Dielectrophoresis Polishing (DEPP)/Chemical Mechanical Polishing (CMP) of Sapphire Substrate

2019 ◽  
Vol 9 (18) ◽  
pp. 3704 ◽  
Author(s):  
Tianchen Zhao ◽  
Julong Yuan ◽  
Qianfa Deng ◽  
Kaiping Feng ◽  
Zhaozhong Zhou ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Sapphire Substrate ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Uniform Electric Field ◽  
Maximum Increase ◽  
Sapphire Surface ◽  
Sapphire Substrates ◽  
Better Than ◽  
Surface Changes

The broad applications of sapphire substrates in many fields warrants an urgent demand for a highly efficient and high precision polishing method for the sapphire substrates. The authors proposed a novel sapphire substrate polishing method that is based on the dielectrophoresis (DEP) effect. The principle of dielectrophoresis polishing (DEPP) is described. A non-uniform electric field was added in the polishing area to drive abrasives moving in the direction towards the plate by the DEP force. The amount of abrasives that participates in the polishing action increases as the distribution of polishing slurry on sapphire surface changes, leading towards the improvement of sapphire polishing both in quality and efficiency. Comparative experiments between DEPP and traditional chemical mechanical polishing (CMP) were carried out. It was found that the maximum increase of sapphire MRR for DEPP is 71%, reaching 13 mg/h, and the minimum increase was 9.5%, reaching 4.6 mg/h. The surface roughness of the sapphire substrate decreases faster and more uniform with DEPP. The final surface roughness of the sapphire substrate after DEPP was Ra 0.87 nm and the flatness was 0.3078 waves (RMS value), which is better than 0.6863 waves (RMS value) of sapphire substrate with traditional CMP polishing.

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