Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO[sub 2] Gate Dielectrics

2006 ◽  
Vol 9 (6) ◽  
pp. G211 ◽  
Author(s):  
Hyunseok Kang ◽  
Seokhoon Kim ◽  
Jihoon Choi ◽  
Jinwoo Kim ◽  
Hyeongtag Jeon ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Remote Plasma ◽  
Si Substrates

SiGe Thin-Film Structures for Solar Cells

1997 ◽  
Vol 485 ◽  
Author(s):  
G. Bremond ◽  
A. Daami ◽  
A. Laugier ◽  
W. Seifert ◽  
M. Kittler ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Base Material ◽  
Chemical Vapor ◽  
Base Layer ◽  
Electrical Measurements ◽  
Remote Plasma ◽  
Si Substrates ◽  
Plasma Hydrogenation ◽  
Active Base

AbstractIn order to study their applicability as the active base material in Si thin crystalline film solar cell technology, SiGe relaxed layers grown by Liquid Phase Epitaxy (LPE) and Chemical Vapor Deposition (CVD) on Si substrates are investigated by optical and electrical measurements (TEM, EXD, PL, EBIC). The main results of this work is to point out the improvement of the SiGe active base layer by using smooth Ge graded SiGe buffer layer and remote plasma hydrogenation. TEM, EXD, PL experiments show the effect of the Ge graded buffer layer grown using LPE, by confining the threading dislocations in the SiGe buffer layer close to the Si/SiGe interface. EBIC measurements reveal low recombination activity of dislocations at 300 K providing the diffusion length exceeds the 15 μm layer thickness The enhanced luminescence of SiGe near bandgap indicates that remote plasma hydrogenation induces a decrease of the non-radiative recombination pathways due to dislocations on CVD layers where defect recombinations dominate as indicated by EBIC measurements.This study points out the importance of controlling relaxed SiGe layers with good minority carrier recombination quality as a key issue for the optimization of new SiGe/Si based solar cells.

Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates

2006 ◽  
Vol 24 (3) ◽  
pp. 678-681 ◽  
Author(s):  
Jihoon Choi ◽  
Seokhoon Kim ◽  
Jinwoo Kim ◽  
Hyunseok Kang ◽  
Hyeongtag Jeon ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Remote Plasma ◽  
Si Substrates ◽  
N2 Plasma

Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics

2003 ◽  
Vol 216 (1-4) ◽  
pp. 302-306 ◽  
Author(s):  
C. Ohshima ◽  
J. Taguchi ◽  
I. Kashiwagi ◽  
H. Yamamoto ◽  
S. Ohmi ◽  
...  
Keyword(s):  
Rare Earth ◽  
Surface Treatment ◽  
Gate Dielectrics ◽  
Rare Earth Oxide ◽  
Annealing Condition ◽  
Si Substrates ◽  
High K ◽  
Effect Of Surface

Effects of N2 and NH3 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics

2010 ◽  
Vol 257 (4) ◽  
pp. 1347-1350 ◽  
Author(s):  
K.-S. Park ◽  
K.-H. Baek ◽  
D.P. Kim ◽  
J.-C. Woo ◽  
L.-M. Do ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Remote Plasma ◽  
Plasma Nitridation

High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies

2001 ◽  
Vol 22 (6) ◽  
pp. 260-262 ◽  
Author(s):  
C.H. Chen ◽  
Y.K. Fang ◽  
C.W. Yang ◽  
S.F. Ting ◽  
Y.S. Tsair ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Remote Plasma ◽  
High Quality ◽  
Plasma Nitridation ◽  
Nitride Oxide
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