High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies

C.H. Chen; Y.K. Fang; C.W. Yang; S.F. Ting; Y.S. Tsair; M.F. Wang; Y.M. Lin; M.C. Yu; S.C. Chen; C.H. Yu; M.S. Liang

doi:10.1109/55.924835

High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologies

IEEE Electron Device Letters ◽

10.1109/55.924835 ◽

2001 ◽

Vol 22 (6) ◽

pp. 260-262 ◽

Cited By ~ 12

Author(s):

C.H. Chen ◽

Y.K. Fang ◽

C.W. Yang ◽

S.F. Ting ◽

Y.S. Tsair ◽

...

Keyword(s):

Gate Dielectrics ◽

Remote Plasma ◽

High Quality ◽

Plasma Nitridation ◽

Nitride Oxide

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Ultrathin nitride/oxide (N/O) gate dielectrics for p/sup +/-polysilicon gated PMOSFETs prepared by a combined remote plasma enhanced CVD/thermal oxidation process

IEEE Electron Device Letters ◽

10.1109/55.720188 ◽

1998 ◽

Vol 19 (10) ◽

pp. 367-369 ◽

Cited By ~ 45

Author(s):

Y. Wu ◽

G. Lucovsky

Keyword(s):

Thermal Oxidation ◽

Oxidation Process ◽

Gate Dielectrics ◽

Remote Plasma ◽

Plasma Enhanced Cvd ◽

Nitride Oxide ◽

Thermal Oxidation Process

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Excellent electrical and reliability characteristics of 11Å oxynitride gate dielectrics by remote plasma nitridation treatment

Applied Physics Letters ◽

10.1063/1.2185612 ◽

2006 ◽

Vol 88 (11) ◽

pp. 112904 ◽

Cited By ~ 2

Author(s):

Tung-Ming Pan

Keyword(s):

Gate Dielectrics ◽

Remote Plasma ◽

Plasma Nitridation ◽

Reliability Characteristics

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Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N/sub 2/O oxidation of NH/sub 3/-nitrided Si

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) ◽

10.1109/vlsit.1999.799381 ◽

2003 ◽

Author(s):

S.C. Song ◽

H.F. Luan ◽

C.H. Lee ◽

A.Y. Mao ◽

S.J. Lee ◽

...

Keyword(s):

Gate Dielectrics ◽

High Quality ◽

Nitride Oxide

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Effects of N2 and NH3 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics

Applied Surface Science ◽

10.1016/j.apsusc.2010.08.069 ◽

2010 ◽

Vol 257 (4) ◽

pp. 1347-1350 ◽

Cited By ~ 29

Author(s):

K.-S. Park ◽

K.-H. Baek ◽

D.P. Kim ◽

J.-C. Woo ◽

L.-M. Do ◽

...

Keyword(s):

Gate Dielectrics ◽

Electrical Characteristics ◽

Remote Plasma ◽

Plasma Nitridation

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Extending the reliability scaling limit of gate dielectrics through remote plasma nitridation of N/sub 2/O-grown oxides and NO RTA treatment

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996646 ◽

2003 ◽

Cited By ~ 2

Author(s):

C.H. Liu ◽

Hsiu-Shan Lin ◽

Yu-Yin Lin ◽

M.G. Chen ◽

T.M. Pan ◽

...

Keyword(s):

Gate Dielectrics ◽

Scaling Limit ◽

Remote Plasma ◽

Plasma Nitridation

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Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2198865 ◽

2006 ◽

Vol 24 (4) ◽

pp. 900-907 ◽

Cited By ~ 14

Author(s):

Jihoon Choi ◽

Seokhoon Kim ◽

Jinwoo Kim ◽

Hyunseok Kang ◽

Hyeongtag Jeon ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Gate Dielectrics ◽

Atomic Layer ◽

Electrical Characteristics ◽

Remote Plasma ◽

Plasma Nitridation ◽

Layer Deposition

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The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO/sub 2/ interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing

IEEE Transactions on Electron Devices ◽

10.1109/16.848278 ◽

2000 ◽

Vol 47 (7) ◽

pp. 1361-1369 ◽

Cited By ~ 53

Author(s):

Y. Wu ◽

G. Lucovsky ◽

Y.-M. Lee

Keyword(s):

Silicon Nitride ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Gate Dielectrics ◽

Remote Plasma ◽

Plasma Enhanced Cvd ◽

Nitride Oxide ◽

Post Deposition

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Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si

Microelectronic Engineering ◽

10.1016/s0167-9317(99)00337-8 ◽

1999 ◽

Vol 48 (1-4) ◽

pp. 55-58 ◽

Cited By ~ 8

Author(s):

S.C. Song ◽

H.F. Luan ◽

C.H. Lee ◽

A.Y. Mao ◽

S.J. Lee ◽

...

Keyword(s):

Gate Dielectrics ◽

High Quality ◽

Nitride Oxide

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Ultra thin (>3 nm) high quality nitride/oxide stack gate dielectrics fabricated by in-situ rapid thermal processing

International Electron Devices Meeting. IEDM Technical Digest ◽

10.1109/iedm.1997.650424 ◽

2002 ◽

Cited By ~ 17

Author(s):

B.Y. Kim ◽

H.F. Luan ◽

D.L. Kwong

Keyword(s):

Thermal Processing ◽

Gate Dielectrics ◽

Rapid Thermal Processing ◽

High Quality ◽

Nitride Oxide

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Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N/sub 2/O oxidation of NH/sub 3/-nitrided Si

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) ◽

10.1109/vtsa.1999.786004 ◽

2003 ◽

Cited By ~ 3

Author(s):

S.C. Song ◽

H.F. Luan ◽

C.H. Lee ◽

A.Y. Mao ◽

S.J. Lee ◽

...

Keyword(s):

Gate Dielectrics ◽

High Quality ◽

Nitride Oxide

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