Impurity Profile Measurements of Thin Epitaxial Silicon Wafer by Multilayer Spreading Resistance Analysis

1977 ◽  
Vol 124 (7) ◽  
pp. 1118-1122 ◽  
Author(s):  
Y. Iida ◽  
H. Abe ◽  
M. Kondo
Keyword(s):  
Silicon Wafer ◽  
Epitaxial Silicon ◽  
Impurity Profile ◽  
Spreading Resistance ◽  
Resistance Analysis

Investigation of the Dopant Distribution in thin Epitaxial Silicon Layers by Means of Spreading Resistance Probe and Secondary Ion Mass Spectrometry

1997 ◽  
Vol 500 ◽  
Author(s):  
Ilya Karpov ◽  
Catherine Hartford ◽  
Greg Moran ◽  
Subramania Krishnakumar ◽  
Ron Choma ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Doping Profile ◽  
Epitaxial Silicon ◽  
Spreading Resistance ◽  
Boron Doped ◽  
Ion Mass Spectrometry ◽  
Chemical Profiles ◽  
Secondary Ion

ABSTRACTIn this paper, we examine the dopant distributions in 1.8 to 4 micron-thick boron- and phosphorus-doped epitaxial silicon layers. These layers were grown by chemical vapor deposition (CVD) on arsenic-, antimony-, or boron-doped (100)- and (111)-oriented substrates. We performed doping profile studies by means of local resistivity measurements using a spreading resistance probe (SRP). Chemical profiles of the dopants were also obtained using secondary ion mass spectrometry (SIMS).

Diffusion, solubility, and thermodynamic properties of gold in solid germanium studied by means of radiotracer and spreading‐resistance analysis

1991 ◽  
Vol 70 (3) ◽  
pp. 1345-1354 ◽  
Author(s):  
A. Almazouzi ◽  
J. Bernardini ◽  
E. G. Moya ◽  
H. Bracht ◽  
N. A. Stolwijk ◽  
...  
Keyword(s):  
Thermodynamic Properties ◽  
Spreading Resistance ◽  
Resistance Analysis

Raman spectroscopy and spreading resistance analysis of phosphorus implanted and annealed silicon

1994 ◽  
Vol 75 (12) ◽  
pp. 8032-8038 ◽  
Author(s):  
Andreas Othonos ◽  
Constantinos Christofides ◽  
Joumana Boussey‐Said ◽  
Michel Bisson
Keyword(s):  
Raman Spectroscopy ◽  
Spreading Resistance ◽  
Resistance Analysis

Observations of Defect Generation at Stacking Faults in Boron Diffused and Oxidized Silicon Films

1973 ◽  
Vol 31 ◽  
pp. 128-129 ◽  
Author(s):  
A. G. Cullis ◽  
D. M. Maher ◽  
C. M. Hsieh
Keyword(s):  
Electron Microscope ◽  
Oxide Layer ◽  
Silicon Wafer ◽  
Transmission Electron Microscope ◽  
Defect Formation ◽  
Stacking Faults ◽  
Epitaxial Silicon ◽  
Partial Dislocations ◽  
Substrate Side ◽  
Transmission Electron

Recently, the transmission electron microscope (TEM) has been used to study the formation and geometry of defect colonies in annealed and quenched silicon and in thermally oxidized and boron diffused silicon. The purpose of the present study was to examine subsidiary defect formation which can occur during the climb of Frank partial dislocations bounding stacking faults in boron diffused and subsequently thermally oxidized silicon. In these experiments, a {001} epitaxial silicon wafer (n-type, 1Ω−cm) was boron diffused (to 5×1018/cm3), and then steam oxidized for 2 hr at 1050°C. Prior to oxidation the wafer was cleaned using HF as a last step. After oxidation the oxide layer was first removed and then specimens from the wafer were chemically thinned from the substrate side for TEM observations (200 kV).

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