Investigation of the Dopant Distribution in thin Epitaxial Silicon Layers by Means of Spreading Resistance Probe and Secondary Ion Mass Spectrometry

1997 ◽  
Vol 500 ◽  
Author(s):  
Ilya Karpov ◽  
Catherine Hartford ◽  
Greg Moran ◽  
Subramania Krishnakumar ◽  
Ron Choma ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Doping Profile ◽  
Epitaxial Silicon ◽  
Spreading Resistance ◽  
Boron Doped ◽  
Ion Mass Spectrometry ◽  
Chemical Profiles ◽  
Secondary Ion

ABSTRACTIn this paper, we examine the dopant distributions in 1.8 to 4 micron-thick boron- and phosphorus-doped epitaxial silicon layers. These layers were grown by chemical vapor deposition (CVD) on arsenic-, antimony-, or boron-doped (100)- and (111)-oriented substrates. We performed doping profile studies by means of local resistivity measurements using a spreading resistance probe (SRP). Chemical profiles of the dopants were also obtained using secondary ion mass spectrometry (SIMS).

Impurity Profiles in InP from Ion Implantation at Elevated Temperatures

1991 ◽  
Vol 240 ◽  
Author(s):  
P. Kringhoj ◽  
B. G. Svensson
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Elevated Temperatures ◽  
Secondary Ion Mass Spectrometry ◽  
Implantation Damage ◽  
Ion Mass Spectrometry ◽  
Chemical Profiles ◽  
Impurity Profiles ◽  
Secondary Ion

ABSTRACTThe chemical profiles of Zn, Ge, and Se implanted into InP at elevated temperatures have been measured with secondary ion mass spectrometry and correlated to the implantation damage as deduced from RBS/channeling measurements. An asymmetric broadening of the chemical profiles towards the bulk was found for implantation temperatures above 150°C. This effect is concluded to be due to impurity channeling during implantation.

In situ boron doping of chemical-vapor-deposited diamond films

1999 ◽  
Vol 14 (8) ◽  
pp. 3211-3220 ◽  
Author(s):  
X. Jiang ◽  
P. Willich ◽  
M. Paul ◽  
C-P. Klages
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Boron Doping ◽  
Boron Doped Diamond ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

A systematic investigation of the boron doping of microwave-plasma-deposited diamond films was performed. Doping with levels up to 550 ppm was carried out in situ on undoped diamond film substrates in a microwave-plasma-assisted chemical vapor deposition with liquid trimethyl-, triethyl-, and tripropylborate and gaseous trimethylborane as doping sources. The dependence of the boron incorporation probability on the doping sources and on the process parameters was studied with secondary ion mass spectrometry. The doping-induced variations of phase quality and morphologic characteristics of the boron-doped diamond layers were investigated by means of scanning electron microscopy and Ramon spectroscopy. The incorporation of other impurities (i.e., hydrogen, nitrogen, oxygen, and silicon) were also determined by secondary ion mass spectrometry. The relations of the concentration of these impurities to the boron incorporation were also studied.

Comparison of Boron Profiles by the Spreading Resistance Profile and the Secondary Ion Mass Spectrometry Techniques

1990 ◽  
Vol 137 (6) ◽  
pp. 1877-1883 ◽  
Author(s):  
R. A. Clapper ◽  
D. G. Schimmel ◽  
J. C. C. Tsai ◽  
F. S. Jabara ◽  
F. A. Stevie ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Spreading Resistance ◽  
Resistance Profile ◽  
Ion Mass Spectrometry ◽  
Secondary Ion
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