Test Method for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe

2001 ◽  
Author(s):  
Keyword(s):  
Silicon Wafer ◽  
Test Method ◽  
Spreading Resistance

Multiple Proton Implantations into Silicon: A Combined EBIC and SRP Study

2013 ◽  
Vol 205-206 ◽  
pp. 311-316 ◽  
Author(s):  
Stefan Kirnstötter ◽  
Martin Faccinelli ◽  
Moriz Jelinek ◽  
Werner Schustereder ◽  
Johannes G. Laven ◽  
...  
Keyword(s):  
Electron Beam ◽  
Carrier Concentration ◽  
Silicon Wafer ◽  
Induced Current ◽  
Spreading Resistance ◽  
Doped Silicon ◽  
Radiation Induced ◽  
Electron Beam Induced Current ◽  
Induced Defects

Protons with energies of 1 MeV and 2.5 MeV were implanted into a p-doped silicon wafer and then the wafer was annealed at 350 °C for one hour. This resulted in two n-doped layers in the otherwise p-doped sample. The carrier concentration was measured using spreading resistance profiling while the positions of the four pn-junctions were measured using electron beam induced current measurements. The carrier concentration is not limited by the available hydrogen but by the concentration of suitable radiation induced defects.

Sign in / Sign up

Export Citation Format

Share Document