The High Temperature Deposition and Evaluation of Phosphorus‐ or Boron‐Doped Silicon Dioxide Films

1979 ◽  
Vol 126 (2) ◽  
pp. 313-319 ◽  
Author(s):  
A. C. Adams ◽  
C. D. Capio ◽  
S. E. Haszko ◽  
G. I. Parisi ◽  
E. I. Povilonis ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Dioxide ◽  
Boron Doped ◽  
Silicon Dioxide Films ◽  
Doped Silicon ◽  
Temperature Deposition

ChemInform Abstract: THE HIGH TEMPERATURE DEPOSITION AND EVALUATION OF PHOSPHORUS- OR BORON-DOPED SILICON DIOXIDE FILMS

1979 ◽  
Vol 10 (21) ◽  
Author(s):  
A. C. ADAMS ◽  
C. D. CAPIO ◽  
S. E. HASZKO ◽  
G. I. PARISI ◽  
E. I. POVILONIS ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Dioxide ◽  
Boron Doped ◽  
Silicon Dioxide Films ◽  
Doped Silicon ◽  
Temperature Deposition

Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals

2005 ◽  
Vol 86 (15) ◽  
pp. 151914 ◽  
Author(s):  
A. Nazarov ◽  
J. M. Sun ◽  
W. Skorupa ◽  
R. A. Yankov ◽  
I. N. Osiyuk ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Nanocrystals ◽  
Light Emission ◽  
Charge Trapping ◽  
Silicon Dioxide Films ◽  
Doped Silicon ◽  
Er Doped

Characterization of fluorine-doped silicon dioxide films by Raman spectroscopy and Electron-spin resonance

2007 ◽  
Vol 515 (17) ◽  
pp. 6682-6685 ◽  
Author(s):  
K. Matsuda ◽  
Y. Yamaguchi ◽  
N. Morita ◽  
T. Matsunobe ◽  
M. Yoshikawa
Keyword(s):  
Raman Spectroscopy ◽  
Electron Spin Resonance ◽  
Silicon Dioxide ◽  
Electron Spin ◽  
Silicon Dioxide Films ◽  
Spin Resonance ◽  
Doped Silicon

Hydrogen concentration profiles in as‐deposited and annealed phosphorus‐doped silicon dioxide films

1988 ◽  
Vol 53 (21) ◽  
pp. 2036-2038 ◽  
Author(s):  
Joseph Z. Xie ◽  
Shyam P. Murarka ◽  
Xin S. Guo ◽  
William A. Lanford
Keyword(s):  
Silicon Dioxide ◽  
Hydrogen Concentration ◽  
Concentration Profiles ◽  
Silicon Dioxide Films ◽  
Doped Silicon ◽  
Phosphorus Doped

High and Low Temperature Measurements of the Chromium Diffusivity in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
J. Zhu ◽  
D. Barbier
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Deep Level ◽  
Boron Doped ◽  
Diffusivity Measurements ◽  
Doped Silicon ◽  
Data Points ◽  
Transient Spectroscopy ◽  
Association Time ◽  
Short Time

AbstractBy grouping high and low temperature diffusivity measurements in boron-doped silicon, a new diffusivity law for chromium in the 20–1050 °C temperature range has been established. High temperature diffusivities were deduced from erfc fits of chromium-boron pair profiles measured by means of Deep Level Transient Spectroscopy in chromium-plated substrates, after annealing for a short time in a lamp furnace. Low temperature diffusivities were derived from the association time constants of the chromium-boron pairing reaction in chromium-contaminated specimens. The whole data points were well fitted using the following expression for the diffusion coefficient: D= 2.6×10-3 exp(-0.81 ± 0.02 eV/kT). Because of the wide 1/T interval available, the migration enthalpy value is more accurate than the previous determinations using only high temperature diffusivity results.

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