Effect of Oxygen Post Plasma Treatment on Characteristics of Electron Cyclotron Resonance CVD Fluorine‐Doped Silicon Dioxide Films Using SiF4 and  O 2 Gas Sources

Seoghyeong Lee; Jong‐Wan Park

doi:10.1149/1.1391665

Effect of Oxygen Post Plasma Treatment on Characteristics of Electron Cyclotron Resonance CVD Fluorine‐Doped Silicon Dioxide Films Using SiF4 and O 2 Gas Sources

Journal of The Electrochemical Society ◽

10.1149/1.1391665 ◽

1999 ◽

Vol 146 (2) ◽

pp. 697-701 ◽

Cited By ~ 7

Author(s):

Seoghyeong Lee ◽

Jong‐Wan Park

Keyword(s):

Silicon Dioxide ◽

Plasma Treatment ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Silicon Dioxide Films ◽

Doped Silicon ◽

Effect Of Oxygen

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ChemInform Abstract: Formation of High-Quality Nitrided Silicon Dioxide Films Using Electron-Cyclotron Resonance Chemical Vapor Deposition with Nitrous Oxide and Silane.

ChemInform ◽

10.1002/chin.199637324 ◽

2010 ◽

Vol 27 (37) ◽

pp. no-no

Author(s):

D. LANDHEER ◽

Y. TAO ◽

J. E. HULSE ◽

T. QUANCE ◽

D.-X. XU

Keyword(s):

Nitrous Oxide ◽

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

High Quality ◽

Silicon Dioxide Films

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Formation of High‐Quality Nitrided Silicon Dioxide Films Using Electron‐Cyclotron Resonance Chemical Vapor Deposition with Nitrous Oxide and Silane

Journal of The Electrochemical Society ◽

10.1149/1.1836699 ◽

1996 ◽

Vol 143 (5) ◽

pp. 1681-1684 ◽

Cited By ~ 17

Author(s):

D. Landheer ◽

Y. Tao ◽

J. E. Hulse ◽

T. Quance ◽

D. Xu

Keyword(s):

Nitrous Oxide ◽

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

High Quality ◽

Silicon Dioxide Films

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Silicon dioxide films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.351789 ◽

1992 ◽

Vol 72 (3) ◽

pp. 1126-1132 ◽

Cited By ~ 41

Author(s):

R. G. Andosca ◽

W. J. Varhue ◽

E. Adams

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Silicon Dioxide Films ◽

Resonance Plasma

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Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580664 ◽

1997 ◽

Vol 15 (4) ◽

pp. 1951-1954 ◽

Cited By ~ 20

Author(s):

H. Nakashima ◽

K. Furukawa ◽

Y. C. Liu ◽

D. W. Gao ◽

Y. Kashiwazaki ◽

...

Keyword(s):

Low Temperature ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Low Temperature Deposition ◽

Temperature Deposition ◽

Resonance Plasma

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Electrical properties of electron cyclotron resonance plasma-deposited silicon dioxide: effect of the oxygen to silane flow ratio

Semiconductor Science and Technology ◽

10.1088/0268-1242/11/3/023 ◽

1996 ◽

Vol 11 (3) ◽

pp. 422-426 ◽

Cited By ~ 6

Author(s):

M J Hernandez ◽

J Garrido ◽

J Martinez ◽

J Piqueras

Keyword(s):

Electrical Properties ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Flow Ratio ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Role of ions in electron cyclotron resonance plasma-enhanced chemical vapor deposition of silicon dioxide

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588003 ◽

1995 ◽

Vol 13 (1) ◽

pp. 118 ◽

Cited By ~ 34

Author(s):

K. L. Seaward

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma

Journal of Applied Physics ◽

10.1063/1.349264 ◽

1991 ◽

Vol 70 (6) ◽

pp. 3301-3313 ◽

Cited By ~ 52

Author(s):

D. A. Carl ◽

D. W. Hess ◽

M. A. Lieberman ◽

T. D. Nguyen ◽

R. Gronsky

Keyword(s):

Electrical Properties ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Dc Bias ◽

Resonance Plasma

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Physical and electrical analysis of silicon dioxide thin films produced by electron-cyclotron resonance chemical-vapour deposition

Microelectronic Engineering ◽

10.1016/s0167-9317(97)00014-2 ◽

1997 ◽

Vol 36 (1-4) ◽

pp. 53-60 ◽

Cited By ~ 3

Author(s):

D. Landheer ◽

L.-Å. Ragnarsson ◽

S. Belkouch

Keyword(s):

Thin Films ◽

Silicon Dioxide ◽

Chemical Vapour Deposition ◽

Cyclotron Resonance ◽

Vapour Deposition ◽

Electron Cyclotron Resonance ◽

Chemical Vapour ◽

Electron Cyclotron ◽

Electrical Analysis

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Electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition of silicon dioxide on strained-SiGe films using tetraethylorthosilicate

Bulletin of Materials Science ◽

10.1007/bf02744953 ◽

1998 ◽

Vol 21 (4) ◽

pp. 283-286

Author(s):

L K Bera ◽

S K Ray ◽

H D Banerjee ◽

C K Maiti

Keyword(s):

Silicon Dioxide ◽

Chemical Vapour Deposition ◽

Cyclotron Resonance ◽

Vapour Deposition ◽

Electron Cyclotron Resonance ◽

Chemical Vapour ◽

Electron Cyclotron ◽

Ecr Plasma ◽

Strained Sige

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Formation of high-quality silicon dioxide films by electron cyclotron resonance plasma oxidation and plasma-enhanced chemical vapour deposition

Thin Solid Films ◽

10.1016/s0040-6090(96)08902-x ◽

1997 ◽

Vol 293 (1-2) ◽

pp. 52-62 ◽

Cited By ~ 13

Author(s):

D. Landheer ◽

J.E. Hulse ◽

T. Quance

Keyword(s):

Silicon Dioxide ◽

Chemical Vapour Deposition ◽

Cyclotron Resonance ◽

Vapour Deposition ◽

Electron Cyclotron Resonance ◽

Chemical Vapour ◽

Electron Cyclotron ◽

Plasma Oxidation ◽

High Quality ◽

Resonance Plasma

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