New method for end-point detection in reactive ion etching of polysilicon

1997 ◽  
Author(s):  
Shahid Aslam ◽  
Naresh C. Das ◽  
Peter K. Shu
Keyword(s):  
Reactive Ion Etching ◽  
New Method ◽  
Ion Etching ◽  
End Point ◽  
End Point Detection ◽  
Point Detection

End-point Detection of Reactive Ion Etching by Plasma Impedance Monitoring

2001 ◽  
Vol 40 (Part 1, No. 3A) ◽  
pp. 1457-1462 ◽  
Author(s):  
Masaaki Kanoh ◽  
Masashi Yamage ◽  
Hiroyuki Takada
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
End Point ◽  
Plasma Impedance ◽  
Impedance Monitoring ◽  
End Point Detection ◽  
Point Detection

End Point Detection for Reactive Ion Etching of Aluminum

1984 ◽  
Vol 131 (1) ◽  
pp. 214-215 ◽  
Author(s):  
Kwang O. Park ◽  
Fredrick C. Rock
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
End Point ◽  
End Point Detection ◽  
Point Detection

Cryoscopic Titrations. Principles of a New Method of End-Point Detection.

1966 ◽  
Vol 38 (6) ◽  
pp. 687-692 ◽  
Author(s):  
Stanley. Bruckenstein ◽  
N. E. Vanderborgh
Keyword(s):  
New Method ◽  
End Point ◽  
End Point Detection ◽  
Point Detection

Ebulliometric Titrations: A New Method Of End-Point Detection

1981 ◽  
Vol 14 (16) ◽  
pp. 1391-1402 ◽  
Author(s):  
Walace A. De Oliveira
Keyword(s):  
New Method ◽  
End Point ◽  
End Point Detection ◽  
Point Detection

Reactive-Ion-Etching of 100nm Linewidth Tungsten Features Using SF6:H2 and a Cr-Liftoff Mask

1993 ◽  
Vol 324 ◽  
Author(s):  
Loretita M. Shirey ◽  
Kelly W. Foster ◽  
William Chu ◽  
John Kosakowski ◽  
Kee Woo Rhee ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Reactive Ion Etching ◽  
Processing Parameters ◽  
Critical Parameters ◽  
Ion Etching ◽  
Novel Method ◽  
End Point Detection ◽  
Sidewall Passivation ◽  
Gas Dilution ◽  
Point Detection

AbstractReactive ion etching of features down to 100 nm in linewidth in tungsten has been studied using an SF6 based chemistry. The studies were carried out in a PlasmaTherm 500 etcher operated at low pressure (2 mTorr) and power (100 mWatts/cm2). Key processing parameters have been identified to achieve the resolution and aspect ratio required for high contrast x-ray masks. The critical parameters include sample temperature, gas dilution and end point detection. However, even with all of these parameters optimized, additional sidewall passivation is required to obtain the necessary 6.5:1 aspect ratio. A novel method of achieving such passivation based on an intermittent etching process is described.

scholarly journals Acid number, viscosity and end-point detection in a multiphase high temperature polymerisation process using an online miniaturised MEMS Fabry-Pérot interferometer

Talanta ◽  
2021 ◽  
Vol 224 ◽  
pp. 121735
Author(s):  
Claudio Avila ◽  
Christos Mantzaridis ◽  
Joan Ferré ◽  
Rodrigo Rocha de Oliveira ◽  
Uula Kantojärvi ◽  
...  
Keyword(s):  
High Temperature ◽  
Acid Number ◽  
End Point ◽  
Fabry Perot ◽  
End Point Detection ◽  
Point Detection
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