Near-surface residue formation in CF4/H2 reactive ion etching of silicon

1992 ◽  
Vol 10 (6) ◽  
pp. 2398 ◽  
Author(s):  
Gregg E. Potter
Keyword(s):  
Reactive Ion Etching ◽  
Surface Residue ◽  
Ion Etching ◽  
Near Surface

Study of near-surface disorder and surface residues after reactive Ion etching of Silicon

1986 ◽  
Vol 9 (5) ◽  
pp. 275-281 ◽  
Author(s):  
G. S. Oehrlein ◽  
G. J. Coyle ◽  
J. G. Clabes ◽  
Y. H. Lee
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Near Surface ◽  
Surface Disorder

Influence of Near-Surface Defects in Si Induced by Reactive Ion Etching on the Electrical Properties of the Pt/n-Si Interface

1997 ◽  
Vol 36 (Part 1, No. 11) ◽  
pp. 6682-6686 ◽  
Author(s):  
Masato Koyama ◽  
Chon-wa Cheong ◽  
Koji Yokoyama ◽  
Iwao Ohdomari
Keyword(s):  
Electrical Properties ◽  
Surface Defects ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Near Surface

Passivation of Zn-Acceptors in InGaAs During Rie with CHF3/H2 and CH4/H2

1989 ◽  
Vol 163 ◽  
Author(s):  
Martin Möhrle
Keyword(s):  
Surface Layer ◽  
Electrical Activity ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Near Surface

AbstractReactive ion etching of highly Zn-doped InGaAs with hydrogen-containing gases such as CHF3/H2, CH4/H2 and CH4/He leads to a drastical reduction of the concentration of electrically active acceptors in a near-surface layer. Ti/Pt/Au contacts applied on as-treated p++-InGaAs layers show non-ohmic I/V-characteristics due to this passivation effect. Annealing at moderate temperatures (330°C, 20 minutes) was found to restore full electrical activity.

Near‐Surface Damage and Contamination after  CF 4 /  H 2 Reactive Ion Etching of Si

1985 ◽  
Vol 132 (6) ◽  
pp. 1441-1447 ◽  
Author(s):  
G. S. Oehrlein ◽  
R. M. Tromp ◽  
J. C. Tsang ◽  
Y. H. Lee ◽  
E. J. Petrillo
Keyword(s):  
Reactive Ion Etching ◽  
Surface Damage ◽  
Ion Etching ◽  
Near Surface

Silicon near-surface damage induced by reactive ion etching

1987 ◽  
Vol 45 ◽  
pp. 244-245
Author(s):  
S. J. Jeng ◽  
G. S. Oehrlein
Keyword(s):  
Silicon Oxide ◽  
Reactive Ion Etching ◽  
Complete Removal ◽  
Surface Damage ◽  
High Resolution Electron Microscopy ◽  
Ion Etching ◽  
Near Surface ◽  
Ion Channeling ◽  
Resolution Electron ◽  
Polysilicon Films

Reactive ion etching (RIE) is an anisotropic etching process which has been used to etch silicon oxide, silicon nitride and polysilicon films. Due to the nonuniformities of etch rate and film thickness, overetching is often required to ensure the complete removal of these films. Previous X-ray photoemission spectroscopy (XPS), He ion channeling, nuclear reaction profiling, Raman scattering and ellipsometry studies have indicated the presence of a fluorocarbon film (30-40 Å) on Si, a heavily disordered layer (∼30 Å) and the etching gas related impurity implantation region (∼250 Å) underneath the Si surface caused by CF4/x% H2 (0≤x≤40) reactive ion etching. In the present investigation, high resolution electron microscopy (HREM) is used to study the structures and distribution of lattice defects in the heavily disordered region. Particular attention is paid to the effects of overetch time and hydrogen addition to CF4 etching gas on Si near-surface damage structures.

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching
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