Electrical Characterization of Ion Implantation into GaAs: Topography and Depth Profiles

1987 ◽  
Vol 134 (10) ◽  
pp. 2527-2533
Author(s):  
D. C. Look
Keyword(s):  
Ion Implantation ◽  
Electrical Characterization ◽  
Depth Profiles

Plasma ion implantation of nitrogen into silicon: Characterization of the depth profiles of implanted ions

1994 ◽  
Vol 76 (10) ◽  
pp. 5666-5675 ◽  
Author(s):  
John J. Vajo ◽  
John D. Williams ◽  
Ronghua Wei ◽  
Robert G. Wilson ◽  
Jesse N. Matossian
Keyword(s):  
Ion Implantation ◽  
Depth Profiles

scholarly journals Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

2011 ◽  
Vol 679-680 ◽  
pp. 804-807 ◽  
Author(s):  
F. Danie Auret ◽  
Walter E. Meyer ◽  
M. Diale ◽  
P.J. Janse Van Rensburg ◽  
S.F. Song ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Energy Levels ◽  
Electrical Characterization ◽  
Defect States ◽  
First Order Kinetics ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Transformation Processes

Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias and temperature conditions, and the transformation processes follow first order kinetics.

Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions

1999 ◽  
Vol 86 (9) ◽  
pp. 4855-4860
Author(s):  
L. Quintanilla ◽  
R. Pinacho ◽  
L. Enrı́quez ◽  
R. Peláez ◽  
S. Dueñas ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electrical Characterization ◽  
Deep Levels

Electrical characterization of a-SiOx:H produced by plasma immersion ion implantation

1999 ◽  
Vol 43 (3) ◽  
pp. 599-607 ◽  
Author(s):  
S.-M. Chen ◽  
J.M. Shannon ◽  
R.M. Gwilliam ◽  
B.J. Sealy
Keyword(s):  
Ion Implantation ◽  
Electrical Characterization ◽  
Plasma Immersion Ion Implantation

scholarly journals Laser ion implantation of Ge in SiO2 using a post-ion acceleration system

2016 ◽  
Vol 35 (1) ◽  
pp. 72-80 ◽  
Author(s):  
M. Cutroneo ◽  
A. Mackova ◽  
L. Torrisi ◽  
V. Lavrentiev
Keyword(s):  
Ion Implantation ◽  
Nuclear Physics ◽  
Physics Institute ◽  
Laser Repetition Rate ◽  
Depth Profiles ◽  
The University ◽  
Ion Species ◽  
Concentration Depth Profiles ◽  
Nuclear Physics Institute

AbstractThis work reports a comparative study of laser ion implantation mainly performed at the Nuclear Physics Institute in Rez (Czech Republic), National Institute of Nuclear Physics (Italy), and the Plasma Physics Laboratory at the University of Messina (Italy) using different approaches. Thick metallic targets were irradiated in vacuum by a focused laser beam to generate plasma-producing multi-energy and multi-species ions. A post-acceleration system was employed in order to increase the energy of the produced ions and to generate ion beams suitable to be implanted in different substrates. The ion dose was controlled by the laser repetition rate and the time of irradiation. Rutherford backscattering analysis was carried out to evaluate the integral amount of implanted ion species, the concentration–depth profiles, the ion penetration depth, and the uniformity of depth profiles for ions laser implanted into monocrystalline substrates. The laser implantation under normal conditions and in post-acceleration configuration will be discussed on the basis of the characterization of the implanted substrates.

Electrical characterization of {311} defects and related junction leakage currents in n-type Si after ion implantation

2012 ◽  
Author(s):  
C. Nyamhere ◽  
F. Cristiano ◽  
F. Olivie ◽  
E. Bedel-Pereira ◽  
J. Boucher ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electrical Characterization ◽  
Leakage Currents

Characterization of AlGaAs/GaAs Heterojunction Bipolar Transistors Using Photoreflectance and Spectral Ellipsometry

1995 ◽  
Vol 406 ◽  
Author(s):  
Patricia B. Smith ◽  
Tae S. Kim ◽  
Lissa K. Magel ◽  
Walter M. Duncan ◽  
A. Vance Ley ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Electrical Characterization ◽  
Contact Layer ◽  
Bipolar Transistors ◽  
Spectral Ellipsometry ◽  
Depth Profiles ◽  
Auger Electron Spectroscopy Depth ◽  
Capacitance Voltage ◽  
Layer Composition

AbstractPhotoreflectance spectroscopy (PR) and spectral ellipsometry (SE) have been used to characterize the doping and structure of heterojunction bipolar transistors (HBT). This information provides a more complete description of the epitaxial HBT structure than is possible by relying solely on electrical characterization of specially processed test structures. Additional benefit is derived from the nondestructive nature of both SE and PR. The measurements are fast enough to be implemented on all production-bound HBT material. We describe our recent results comparing capacitance-voltage measurements with PRderived doping levels in the emitter layer of the HBT. We also describe some work comparing SE fit results with Auger electron spectroscopy depth profiles for InGaAs contact layer composition and thickness.

Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions

1999 ◽  
Vol 85 (11) ◽  
pp. 7978-7980 ◽  
Author(s):  
L. Quintanilla ◽  
R. Pinacho ◽  
L. Enrı́quez ◽  
R. Peláez ◽  
S. Dueñas ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Electrical Characterization
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