Electrical characterization of {311} defects and related junction leakage currents in n-type Si after ion implantation

2012 ◽  
Author(s):  
C. Nyamhere ◽  
F. Cristiano ◽  
F. Olivie ◽  
E. Bedel-Pereira ◽  
J. Boucher ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electrical Characterization ◽  
Leakage Currents

scholarly journals Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

2011 ◽  
Vol 679-680 ◽  
pp. 804-807 ◽  
Author(s):  
F. Danie Auret ◽  
Walter E. Meyer ◽  
M. Diale ◽  
P.J. Janse Van Rensburg ◽  
S.F. Song ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Energy Levels ◽  
Electrical Characterization ◽  
Defect States ◽  
First Order Kinetics ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Transformation Processes

Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias and temperature conditions, and the transformation processes follow first order kinetics.

Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions

1999 ◽  
Vol 86 (9) ◽  
pp. 4855-4860
Author(s):  
L. Quintanilla ◽  
R. Pinacho ◽  
L. Enrı́quez ◽  
R. Peláez ◽  
S. Dueñas ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electrical Characterization ◽  
Deep Levels

Characterization of CMOS Devices in 0.5-μm Silicon-On-Sapphire Films Modified by Solid Phase Epitaxy and Regrowth (Spear)

1984 ◽  
Vol 33 ◽  
Author(s):  
P.K. Vasudev ◽  
D.C. Mayer
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Solid Phase Epitaxy ◽  
Epitaxial Silicon ◽  
Leakage Currents ◽  
Propagation Delays

ABSTRACTComplementary Metal-Oxide-Semiconductor (CMOS) devices and circuits with minimum feature sizes of about 1 μm were fabricated in 0.5-μm-thick epitaxial Silicon-On-Sapphire (SOS) films. The films were modified by ion implantation and subsequent solid phase recrystallization processes which reduced the total microtwin concentrations in the Si layers by more than a hundredfold, while increasing electron and hole channel mobilities between 40 to 50%. Leakage currents were reduced by over 2 orders of magnitude, while drive currents and subthreshold slopes showed significant improvements over as–grown SOS films. Propagation delays of less than 80 psec were obtained for CMOS/SOS inverters with Leff = 0.6 μm.

Electrical characterization of a-SiOx:H produced by plasma immersion ion implantation

1999 ◽  
Vol 43 (3) ◽  
pp. 599-607 ◽  
Author(s):  
S.-M. Chen ◽  
J.M. Shannon ◽  
R.M. Gwilliam ◽  
B.J. Sealy
Keyword(s):  
Ion Implantation ◽  
Electrical Characterization ◽  
Plasma Immersion Ion Implantation

scholarly journals Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

Coatings ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 699 ◽  
Author(s):  
Thi Tran Anh Tuan ◽  
Dong-Hau Kuo ◽  
Phuong Thao Cao ◽  
Van Sau Nguyen ◽  
Quoc-Phong Pham ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Forward Bias ◽  
Electrical Characterization ◽  
Leakage Currents ◽  
Te Mode ◽  
Current Densities ◽  
P Type ◽  
Gan Film ◽  
Mg Doped

The modeling of p–InxGa1−xN/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In0.05Ga0.95N were deposited directly on the n–Si (100) wafer by the RF reactive sputtering at 400 °C with single cermet targets. Al and Pt with the square size of 1 mm2 were used for electrodes of p–InxGa1−xN/n–Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be Np = 3.45 × 1016 cm−3 and µ = 145 cm2/V·s for p–GaN film, Np = 2.53 × 1017 cm−3, and µ = 45 cm2/V·s for p–InGaN film. By the I–V measurement at RT, the leakage currents at −5 V and turn-on voltages were found to be 9.31 × 10−7 A and 2.4 V for p–GaN/n–Si and 3.38 × 10−6 A and 1.5 V for p–InGaN/n–Si diode. The current densities at the forward bias of 20 V were 0.421 and 0.814 A·cm−2 for p–GaN/n–Si and p–InGaN/n–Si devices. The electrical properties were measured at the temperature range of 25 to 150 °C. By calculating based on the TE mode, Cheungs’ and Norde methods, and other parameters of diodes were also determined and compared.

Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions

1999 ◽  
Vol 85 (11) ◽  
pp. 7978-7980 ◽  
Author(s):  
L. Quintanilla ◽  
R. Pinacho ◽  
L. Enrı́quez ◽  
R. Peláez ◽  
S. Dueñas ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Electrical Characterization

scholarly journals Ion Implantation and Annealing Studies in III–V Nitrides

1996 ◽  
Vol 449 ◽  
Author(s):  
J. C. Zolper ◽  
S. J. Pearton ◽  
J. S. Williams ◽  
H. H. Tan ◽  
R. J. Karlicek ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ohmic Contacts ◽  
Electrical Characterization ◽  
Surface Region ◽  
Full Potential ◽  
Barrier Formation ◽  
Effect Transistor ◽  
Initial Implantation ◽  
P Type

ABSTRACTIon implantation doping and isolation is expected to play an enabling role for the realization of advanced Ill-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor.1-4 Although these initial implantation studies demonstrated the feasibility of this technique for the Ill-Nitride materials, further work is needed to realize its full potential.After reviewing some of the initial studies in this field, we present new results for improved annealing sequences and defect studies in GaN. First, sputtered A1N is shown by electrical characterization of Schottky and Ohmic contacts to be an effective encapsulant of GaN during the 1100 °C implant activation anneal. The A1N suppresses N-loss from the GaN surface and the formation of a degenerate n+-surface region that would prohibit Schottky barrier formation after the implant activation anneal. Second, we examine the nature of the defect generation and annealing sequence following implantation using both Rutherford Backscattering (RBS) and Hall characterization. We show that for a Si-dose of l × l016 cm-2 50% electrical donor activation is achieved despite a significant amount of residual implantation-induced damage in the material.

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