Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions

1999 ◽  
Vol 85 (11) ◽  
pp. 7978-7980 ◽  
Author(s):  
L. Quintanilla ◽  
R. Pinacho ◽  
L. Enrı́quez ◽  
R. Peláez ◽  
S. Dueñas ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Electrical Characterization

scholarly journals Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

2011 ◽  
Vol 679-680 ◽  
pp. 804-807 ◽  
Author(s):  
F. Danie Auret ◽  
Walter E. Meyer ◽  
M. Diale ◽  
P.J. Janse Van Rensburg ◽  
S.F. Song ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Energy Levels ◽  
Electrical Characterization ◽  
Defect States ◽  
First Order Kinetics ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Transformation Processes

Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias and temperature conditions, and the transformation processes follow first order kinetics.

Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)

1987 ◽  
Vol 97 ◽  
Author(s):  
H. Kong ◽  
H. J. Kim ◽  
J. A. Edmond ◽  
J. W. Palmour ◽  
J. Ryu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Deep Level ◽  
Schottky Diodes ◽  
Free Carriers ◽  
Device Development ◽  
Post Annealing ◽  
P Type ◽  
Sic Films

ABSTRACTMonocrystalline β-SiC films have been chemically vapor deposited on Si(100) and c-SiC(0001) at 1660K-1823K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films grown directly on Si(100) contained substantial concentrations of dislocations, stacking faults and antiphase boundaries (APB); those on α-SiC(0001) contained double positioning boundaries. Both the APBs and the double positioning boundaries were eliminated by using off-axis orientations of the respective substrates. Films produced on Si(100) have also been doped during growth and via ion implantation with B or Al (p-type) or P or N (n-type) at LN, room and elevated temperatures. Results from the former procedure showed the ionized dopant/total dopant concentration ratios for N, P, B and Al to be 0.1, 0.2, 0.002 and 0.01, respectively. The solubility limits of N, P and B at 1660K were determined to be ∼ 2E20, 1E18 and 8E18 cm−3, respectively; that of Al exceeds 2E19 cm−3. High temperature ion implantation coupled with dynamic and post annealing resulted in a markedly reduced defect concentration relative to that observed in similar research at the lower temperatures. Schottky diodes, p-n junctions, and MOSFET devices have been fabricated. The p-n junctions have the characteristics of insulators containing free carriers and deep level traps. The MOSFETs show very good I-V characteristics up to 673K, but have not been optimized.

Electrical Characterization of 1 keV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy

1998 ◽  
Vol 510 ◽  
Author(s):  
P.N.K. Deenapanray ◽  
F.D. Auret ◽  
M.C. Ridgway ◽  
S.A. Goodman ◽  
G. Myburg
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Ion Bombardment ◽  
Thermally Stable ◽  
Vacancy Clusters ◽  
Transient Spectroscopy ◽  
Low Energy Ions

AbstractWe report on the electrical properties of defects introduced in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Epitaxial layers with different O contents were used in this study. We demonstrate using deep level transient spectroscopy that the low energy ions introduced a family of similarly structured defects (DI) with electronic levels at ∼0.20 eV below the conduction band. The introduction of this set of identical defects was not influenced by the presence of O. Ion bombardment of O-rich Si introduced another family of prominent traps (D2) with levels close to the middle of the band gap. Both sets of defects were thermally stable up to ∼400 °C, and their annealing was accompanied by the introduction of a family of secondary defects (D3). The “D3” defects had levels at ∼0.21 eV below the conduction band and were thermally stable at 650 °C. We have proposed that the “DI”, “D2”, and “D3” defects are higherorder vacancy clusters (larger than the divacancy) or complexes thereof.

Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy

2004 ◽  
Vol 241 (12) ◽  
pp. 2811-2815 ◽  
Author(s):  
J. S. Kim ◽  
E. K. Kim ◽  
H. J. Kim ◽  
E. Yoon ◽  
I.-W. Park ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Transient Spectroscopy

scholarly journals Deep‐level transient spectroscopy and electrical characterization of ion‐implantedp‐njunctions into undoped InP

1995 ◽  
Vol 78 (9) ◽  
pp. 5325-5330 ◽  
Author(s):  
Jaime M. Martin ◽  
S. García ◽  
I. Mártil ◽  
G. González‐Díaz ◽  
E. Castán ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Transient Spectroscopy

The Effects of Illumination on Point Defects Detected in High Purity Semi-Insulating 4H-SiC

2018 ◽  
Vol 924 ◽  
pp. 253-256 ◽  
Author(s):  
Giovanni Alfieri ◽  
Lukas Kranz ◽  
Lars Knoll ◽  
Vinoth Kumar Sundaramoorthy
Keyword(s):  
Point Defects ◽  
High Purity ◽  
Deep Level Transient Spectroscopy ◽  
Optical Pulse ◽  
Deep Level ◽  
Electrical Characterization ◽  
Ionization Energies ◽  
Transient Spectroscopy

The electrical characterization of high-purity semi-insulating 4H-SiC is carried out by means of current deep level transient spectroscopy (I-DLTS). Measurements are performed by employing either an electrical or optical pulse (below/above bandgap). The study performed on as-grown material, either annealed or oxidized, reveals the presence of six levels with ionization energies in the 0.4-1.3 eV range.

Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior

2003 ◽  
Vol 764 ◽  
Author(s):  
M. Ahoujja ◽  
H. C. Crocket ◽  
M. B. Scott ◽  
Y.K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Proton Irradiation ◽  
Deep Level ◽  
Electrical Characterization ◽  
Complete Recovery ◽  
High Energy ◽  
Curve Fit ◽  
Higher Temperature ◽  
Transient Spectroscopy ◽  
Anneal Temperature

AbstractWe report on the electrical properties of defects introduced in epitaxial 4H-SiC by 2 MeV protons using deep level transient spectroscopy (DLTS). After proton irradiation with a dose of about 1.5×1014 cm-2, the DLTS measurements were made, and the rate window shows a single broad peak between 280 and 310 K. The intensity of this peak remains unchanged after a thermal anneal at 900°C for 20 min. However, after annealing at or above 1100°C, the peak intensity gradually decreases with anneal temperature up to 1500°C, indicating a decrease in the defect concentration. Because a complete damage recovery of the SiC is not observed even after annealing at 1500°C, we believe a higher temperature annealing is necessary for a complete recovery. Using a curve fit analysis, a set of deep levels of defect centers were found with energy ranging between 567 and 732 meV. These traps do not exhibit a significant change in the trap energy or capture cross-section parameters as a function of anneal temperature, but the decrease in the trap density with increasing anneal temperature demonstrates a damage recovery.

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