Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions

1999 ◽  
Vol 86 (9) ◽  
pp. 4855-4860
Author(s):  
L. Quintanilla ◽  
R. Pinacho ◽  
L. Enrı́quez ◽  
R. Peláez ◽  
S. Dueñas ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electrical Characterization ◽  
Deep Levels

scholarly journals Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

2011 ◽  
Vol 679-680 ◽  
pp. 804-807 ◽  
Author(s):  
F. Danie Auret ◽  
Walter E. Meyer ◽  
M. Diale ◽  
P.J. Janse Van Rensburg ◽  
S.F. Song ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Energy Levels ◽  
Electrical Characterization ◽  
Defect States ◽  
First Order Kinetics ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Transformation Processes

Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias and temperature conditions, and the transformation processes follow first order kinetics.

Electrical characterization of a-SiOx:H produced by plasma immersion ion implantation

1999 ◽  
Vol 43 (3) ◽  
pp. 599-607 ◽  
Author(s):  
S.-M. Chen ◽  
J.M. Shannon ◽  
R.M. Gwilliam ◽  
B.J. Sealy
Keyword(s):  
Ion Implantation ◽  
Electrical Characterization ◽  
Plasma Immersion Ion Implantation

Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted n InP junctions

1998 ◽  
Vol 13 (4) ◽  
pp. 389-393 ◽  
Author(s):  
L Quintanilla ◽  
S Dueñas ◽  
E Castán ◽  
R Pinacho ◽  
R Peláez ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Deep Levels

Electrical characterization of {311} defects and related junction leakage currents in n-type Si after ion implantation

2012 ◽  
Author(s):  
C. Nyamhere ◽  
F. Cristiano ◽  
F. Olivie ◽  
E. Bedel-Pereira ◽  
J. Boucher ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electrical Characterization ◽  
Leakage Currents

Deep Levels Observed in High-Purity Semi-Insulating 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 455-458 ◽  
Author(s):  
Giovanni Alfieri ◽  
Tsunenobu Kimoto ◽  
Gerhard Pensl
Keyword(s):  
High Purity ◽  
Deep Level ◽  
Electrical Characterization ◽  
Current Mode ◽  
Deep Levels ◽  
Light Illumination ◽  
Hall Effect Measurements ◽  
Transient Spectroscopy ◽  
P Type

We report on the electrical characterization of high-purity semi-insulating 4H-SiC after annealing at temperatures between room temperature and 1700 oC by current-mode deep level transient spectroscopy (I-DLTS). I-V and Hall-effect measurements revealed that the investigated substrates possess p-type conductivity. Four deep levels were detected by I-DLTS with activation energies in the 0.15-1.29 eV range. We studied their thermal stability as well as their stability with respect to light illumination.

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