Hexachlorodisilane as a Precursor in the LPCVD of Silicon Dioxide and Silicon Oxynitride Films

1989 ◽  
Vol 136 (8) ◽  
pp. 2382-2386 ◽  
Author(s):  
R. C. Taylor ◽  
B. A. Scott
Keyword(s):  
Silicon Dioxide ◽  
Silicon Oxynitride

scholarly journals Dynamic Negative Bias Stress Instability Effects in Hafnium Silicon Oxynitride and Silicon Dioxide

2019 ◽  
Vol 35 (4) ◽  
pp. 447-459
Author(s):  
Jesse Mee ◽  
Roderick Devine ◽  
Harold Hjalmarson ◽  
Ken Kambour
Keyword(s):  
Silicon Dioxide ◽  
Silicon Oxynitride ◽  
Negative Bias ◽  
Bias Stress

New design graded refractive index antireflection coatings for silicon solar cells

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740028 ◽  
Author(s):  
Chao Xiong ◽  
Weilong Xu ◽  
Yu Zhao ◽  
Jin Xiao ◽  
Xifang Zhu
Keyword(s):  
Silicon Dioxide ◽  
Double Layer ◽  
Solar Spectrum ◽  
Antireflection Coating ◽  
Silicon Oxynitride ◽  
Black Silicon ◽  
Antireflection Coatings ◽  
Nanoporous Silicon ◽  
The Matrix ◽  
Research Outcome

Reflectance spectrum of nanoporous silicon dioxide (SiO2) double layer was calculated by using the matrix method. The results were compared with the corresponding spectrum of silicon oxynitride (SiO[Formula: see text]N[Formula: see text])–porous silicon (PS) double layer which deposited on nanostructured black silicon coatings. The nanoporous silicon dioxide (SiO2) double layer deposited on nanostructure black silicon antireflection coating presents a lower reflectance in a broad range of solar spectrum. This research outcome may find a wide application in solar cell industry.

The Impact of Dielectric Films and Post-Metal Etch Wet Treatment on Charge-Induced Corrosion of Tungsten Vias

2007 ◽  
Vol 990 ◽  
Author(s):  
Szetsen Lee ◽  
Chi-Jung Ni
Keyword(s):  
Silicon Dioxide ◽  
Reaction Mechanisms ◽  
Dielectric Film ◽  
Silicon Oxynitride ◽  
Dielectric Films ◽  
Chemical Solutions ◽  
Wet Chemical ◽  
Chemical Reaction Mechanisms ◽  
Dielectric Charge ◽  
The Impact

ABSTRACTThe prevention of charge-induced corrosion of tungsten vias after metal etch has been stud-ied with several types of commonly used wet chemical solutions and two kinds of dielectric film materials, silicon dioxide and silicon oxynitride. It was found that one of the solutions, leaving essentially no polymer residue on metal lines, could effectively prevent corrosion of tungsten vias. Other solutions either produced minor residues or severe sidewall erosion on metal lines. This study has shown that the combination of wet treatment with oxynitride as the dielectric charge shielding film was as effective as other conventional methods for preventing tungsten vias corrosion. However, for metal lines capped with silicon dioxide, significant sidewall ero-sion, surface roughness, and polymer residue were observed. Chemical reaction mechanisms are proposed for the preservation of tungsten vias after metal etch.

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