scholarly journals A New Lateral Growth Free Formation Technique for Titanium Silicide Using the Si/W/Ti Trilayer Structure

1988 ◽  
Vol 135 (9) ◽  
pp. 2342-2347 ◽  
Author(s):  
Ming‐Zen Lin ◽  
Chung‐Yu Wu
Keyword(s):  
Titanium Silicide ◽  
Lateral Growth ◽  
Trilayer Structure ◽  
Formation Technique

The Effect of Processing Environment on the Lateral Growth of Titanium Silicide

1988 ◽  
Vol 135 (10) ◽  
pp. 2582-2586 ◽  
Author(s):  
R. M. Vadjikar ◽  
R. P. Roberge ◽  
T. G. Wolfe
Keyword(s):  
Titanium Silicide ◽  
Lateral Growth

Formation of Titanium Silicide At Atmospheric Pressure

1982 ◽  
Vol 14 ◽  
Author(s):  
Peter Revesz ◽  
Jeno Gyimesi ◽  
Jozsef Gyulai
Keyword(s):  
Silicon Dioxide ◽  
Single Crystal ◽  
Oxide Layer ◽  
Atmospheric Pressure ◽  
Titanium Silicide ◽  
Lateral Growth ◽  
Vertical Growth ◽  
High Doses

ABSTRACTTwo problems connected with the growth of Ti-silicide have been investigated. It is shown if a silicon dioxide step on a single crystal of silicon covered with titanium is annealed then, following vertical growth on the silicon part, lateral growth of Ti-silicide takes place over the oxide layer. We also studied the problems of Ti-silicide growthon samples implanted with high doses of Sb, As, P, Ar and O prior to Ti evaporation.

An Environment‐Insensitive Trilayer Structure for Titanium Silicide Formation

1986 ◽  
Vol 133 (11) ◽  
pp. 2386-2389 ◽  
Author(s):  
Ming‐Zen Lin ◽  
Yeou‐Chong Simon Yu ◽  
Chung‐Yu Wu
Keyword(s):  
Titanium Silicide ◽  
Silicide Formation ◽  
Trilayer Structure

Lateral growth of titanium silicide over a silicon dioxide layer

1983 ◽  
Vol 54 (4) ◽  
pp. 2114-2115 ◽  
Author(s):  
P. Révész ◽  
J. Gyimesi ◽  
L. Pogány ◽  
G. Petõ
Keyword(s):  
Silicon Dioxide ◽  
Titanium Silicide ◽  
Lateral Growth ◽  
Silicon Dioxide Layer

Scanning Transmission Electron Microscopy of Polyethylene Crystals

1980 ◽  
Vol 38 ◽  
pp. 242-245
Author(s):  
F. Khoury ◽  
L. H. Bolz
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystallization Temperature ◽  
Scanning Transmission Electron Microscopy ◽  
Growth Habit ◽  
Lateral Growth ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Growth Habits

The lateral growth habits and non-planar conformations of polyethylene crystals grown from dilute solutions (<0.1% wt./vol.) are known to vary depending on the crystallization temperature.1-3 With the notable exception of a study by Keith2, most previous studies have been limited to crystals grown at <95°C. The trend in the change of the lateral growth habit of the crystals with increasing crystallization temperature (other factors remaining equal, i.e. polymer mol. wt. and concentration, solvent) is illustrated in Fig.l. The lateral growth faces in the lozenge shaped type of crystal (Fig.la) which is formed at lower temperatures are {110}. Crystals formed at higher temperatures exhibit 'truncated' profiles (Figs. lb,c) and are bound laterally by (110) and (200} growth faces. In addition, the shape of the latter crystals is all the more truncated (Fig.lc), and hence all the more elongated parallel to the b-axis, the higher the crystallization temperature.

Un centre de formation technique en 1800 : Coye

1964 ◽  
Vol 19 (4) ◽  
pp. 731-736
Author(s):  
Jean-Jacques Hemardinquer
Keyword(s):  
Formation Technique

« L'introduction du machinisme » de l'Angleterre sur le continent se laisse mal dégager de la légende, comme toute origine et toute aventure d'espionnage. En fait, le problème essentiel était la formation de « cadres » nationaux par les « experts » britanniques, préfiguration, à certains égards, de l'expérience beaucoup plus vaste en cours dans le monde actuel. Que l'anglais Spencer construise une mule-jenny à Amiens dès 1788, ne suffit pas à « introduire » cette machine : il repart, et personne n'est capable de la faire fonctionner.

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