Lateral growth of titanium silicide over a silicon dioxide layer

1983 ◽  
Vol 54 (4) ◽  
pp. 2114-2115 ◽  
Author(s):  
P. Révész ◽  
J. Gyimesi ◽  
L. Pogány ◽  
G. Petõ
Keyword(s):  
Silicon Dioxide ◽  
Titanium Silicide ◽  
Lateral Growth ◽  
Silicon Dioxide Layer

Formation of Titanium Silicide At Atmospheric Pressure

1982 ◽  
Vol 14 ◽  
Author(s):  
Peter Revesz ◽  
Jeno Gyimesi ◽  
Jozsef Gyulai
Keyword(s):  
Silicon Dioxide ◽  
Single Crystal ◽  
Oxide Layer ◽  
Atmospheric Pressure ◽  
Titanium Silicide ◽  
Lateral Growth ◽  
Vertical Growth ◽  
High Doses

ABSTRACTTwo problems connected with the growth of Ti-silicide have been investigated. It is shown if a silicon dioxide step on a single crystal of silicon covered with titanium is annealed then, following vertical growth on the silicon part, lateral growth of Ti-silicide takes place over the oxide layer. We also studied the problems of Ti-silicide growthon samples implanted with high doses of Sb, As, P, Ar and O prior to Ti evaporation.

scholarly journals Research on Sapphire Deep Cavity Corrosion and Mask Selection Technology

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 136
Author(s):  
Yiingqi Shang ◽  
Hongquan Zhang ◽  
Yan Zhang
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Chemical Vapor ◽  
Nitride Layer ◽  
Wet Etching ◽  
Silicon Dioxide Layer ◽  
Etching Depth ◽  
Deep Cavity ◽  
Mask Layer ◽  
Layer Composite

Aimed at the problem of the small wet etching depth in sapphire microstructure processing technology, a multilayer composite mask layer is proposed. The thickness of the mask layer is studied, combined with the corrosion rate of different materials on sapphire in the sapphire etching solution, different mask layers are selected for the corrosion test on the sapphire sheet, and then the corrosion experiment is carried out. The results show that at 250 °C, the choice is relatively high when PECVD (Plasma Enhanced Chemical Vapor Deposition) is used to make a double-layer composite film of silicon dioxide and silicon nitride. When the temperature rises to 300 °C, the selection ratio of the silicon dioxide layer grown by PECVD is much greater than that of the silicon nitride layer. Therefore, under high temperature conditions, a certain thickness of silicon dioxide can be used as a mask layer for deep cavity corrosion.

EFM Study on Ge Island: Carrier Charge and Storage Effect

2010 ◽  
Vol 1260 ◽  
Author(s):  
Zhen Lin ◽  
Pavel Brunkov ◽  
Xueying Ma ◽  
Franck Bassani ◽  
Georges Bremond
Keyword(s):  
Silicon Dioxide ◽  
Electrostatic Force ◽  
Storage Effect ◽  
Silicon Dioxide Layer ◽  
Conductive Material ◽  
Doped Silicon ◽  
Charge Decay ◽  
Memory Applications ◽  
Carrier Charge ◽  
And Storage

AbstractIn this paper, individual Ge nano island on top of a silicon dioxide layer of thermally grown on a n+ type doped silicon (001) substrate have been studied. The charging ability of an individual Ge island was evaluated by EFM two-pass lift mode measurement. Such Ge nano island becomes an iso-potential and behaves as a conductive material after being charged. These charges were directly injected and were trapped homogenous in the isolated Ge island. It is also shown that the dominant charge decay mechanism during discharging of nc-Ge is related to the leakage of these trapped charges. Further more, the retention time of these trapped charges was evaluated and the electrostatic force was also studied by using different tip bias during scan. Such a study should be very useful to the Ge-nc in memory applications.

Influence of the Silicon Dioxide Layer Thickness on Electroforming in Open TiN–SiO2–W Sandwiches

2018 ◽  
Vol 63 (11) ◽  
pp. 1629-1635 ◽  
Author(s):  
V. M. Mordvintsev ◽  
S. E. Kudryavtsev ◽  
V. L. Levin
Keyword(s):  
Silicon Dioxide ◽  
Layer Thickness ◽  
Silicon Dioxide Layer

The Effect of Processing Environment on the Lateral Growth of Titanium Silicide

1988 ◽  
Vol 135 (10) ◽  
pp. 2582-2586 ◽  
Author(s):  
R. M. Vadjikar ◽  
R. P. Roberge ◽  
T. G. Wolfe
Keyword(s):  
Titanium Silicide ◽  
Lateral Growth

Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures

2017 ◽  
Vol 51 (1) ◽  
pp. 49-53 ◽  
Author(s):  
V. V. Bolotov ◽  
E. V. Knyazev ◽  
I. V. Ponomareva ◽  
V. E. Kan ◽  
N. A. Davletkildeev ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Dioxide ◽  
Double Layer ◽  
Silicon On Insulator ◽  
Silicon Dioxide Layer
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