An Environment‐Insensitive Trilayer Structure for Titanium Silicide Formation

1986 ◽  
Vol 133 (11) ◽  
pp. 2386-2389 ◽  
Author(s):  
Ming‐Zen Lin ◽  
Yeou‐Chong Simon Yu ◽  
Chung‐Yu Wu
Keyword(s):  
Titanium Silicide ◽  
Silicide Formation ◽  
Trilayer Structure

Oxygen behavior during titanium silicide formation by rapid thermal annealing

1987 ◽  
Vol 62 (10) ◽  
pp. 4319-4321 ◽  
Author(s):  
R. Pantel ◽  
D. Levy ◽  
D. Nicolas ◽  
J. P. Ponpon
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Titanium Silicide ◽  
Silicide Formation

scholarly journals Titanium Silicide Formation in Presence of Oxygen

1992 ◽  
Vol 15 (1) ◽  
pp. 9-26 ◽  
Author(s):  
C. Nobili ◽  
F. Nava ◽  
G. Ottaviani ◽  
M. Costato ◽  
G. De Santi ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Titanium Silicide ◽  
Silicide Formation ◽  
Metal Oxidation ◽  
X Ray Diffraction ◽  
Amorphous Films ◽  
Titanium Disilicide ◽  
X Ray

In-situ resistivity vs. temperature, Rutherford backscattering spectrometry, Auger electron spectroscopy and X-ray diffraction measurements have been performed in order to study the effects arising from the presence of oxygen in the annealing ambient on the integrity of amorphous films of TiSix, with x ranging from 1.45 to 2.1. Crystalisation occurs around 400 C. The presence of oxygen produces the formation of silicon and titanium oxide around 500 C. Critical analysis of the experimental results have indicated that metal oxidation is inhibited when an excess of silicon is present, which suggests the use of a sputtered Si coating cap as a medium capable of effectively decoupling the silicide film from oxygen. This avoids unwanted Ti oxidation even in heavily oxygen contaminated ambients up to the highest temperatures used for the formation of low resistivity titanium disilicide.

Titaniun Silicide Formation on Heavily Doped Arsenic-Implanted Silicon

1985 ◽  
Vol 48 ◽  
Author(s):  
S. L. Dowben ◽  
D. W. Marsh ◽  
G. A. Smith ◽  
N. Lewis ◽  
T. P. Chow ◽  
...  
Keyword(s):  
Refractory Metals ◽  
Titanium Silicide ◽  
Oxide Semiconductor ◽  
Processing Temperature ◽  
Silicide Formation ◽  
Subsequent Behavior ◽  
Heavily Doped ◽  
High Temperature Processing ◽  
Dopant Redistribution ◽  
New Generation

Every new generation of metal/oxide/semiconductor (MOS) technology has achieved higher densities and switching speeds. In order to match these characteristics of MOS circuits, a metallization which has a low resistivity, has electrical and chemical stability, can withstand high-temperature processing and can be manufactured relatively easily and reliably is needed. These requirements make the refractory metals a suitable if not ideal choice [1,2]. However, there has been some question as to the reliability of processing during silicide formation when using refractory metals. When the metallization is used to form self-aligned silicide structures over heavily doped source and drain regions, it is crucial to understand the subsequent behavior of the dopant during the processing period. Whereas others have studied different aspects of dopant redistribution [3–8], we report in this paper a systematic study of the electrical, structural, and elemental properties of titanium silicide formation on arsenic implanted silicon as a function of implanted dose and processing temperature.

A parametric study of titanium silicide formation by rapid thermal processing

1996 ◽  
Vol 11 (2) ◽  
pp. 412-421 ◽  
Author(s):  
A. V. Amorsolo ◽  
P. D. Funkenbusch ◽  
A. M. Kadin
Keyword(s):  
Sheet Resistance ◽  
Parametric Study ◽  
Thermal Processing ◽  
Annealing Temperature ◽  
Rapid Thermal Processing ◽  
Titanium Silicide ◽  
Wet Etching ◽  
Silicide Formation ◽  
Temperature Variations ◽  
Sputter Etching

A parametric study of titanium silicide formation by rapid thermal processing was conducted to determine the effects of annealing temperature (650 °C, 750 °C), annealing time (30 s, 60 s), wet etching (no HF dip, with HF dip), sputter etching (no sputter etch, with sputter etch), and annealing ambient (Ar, N2) on the completeness of conversion of 60 nm Ti on (111)-Si to C54–TiSi2 based on sheet resistance and the uniformity of the sheet resistance measurements across the entire wafer. Statistical analysis of the results showed that temperature, annealing ambient, and sputter etching had the greatest influence. Increasing the temperature and using argon gas instead of nitrogen promoted conversion of the film to C54–TiSi2. On the other hand, sputter etching retarded it. The results also indicated significant interactions among these factors. The best uniformity in sheet resistance was obtained by annealing at 750 °C without sputter etching. The different sheet resistance profiles showed gradients that were consistent with expected profile behaviors, arising from temperature variations across the wafer due to the effect of a flowing cold gas and the effects of the wafer edge and flats.

Sign in / Sign up

Export Citation Format

Share Document