The Effect of Processing Environment on the Lateral Growth of Titanium Silicide

1988 ◽  
Vol 135 (10) ◽  
pp. 2582-2586 ◽  
Author(s):  
R. M. Vadjikar ◽  
R. P. Roberge ◽  
T. G. Wolfe
Keyword(s):  
Titanium Silicide ◽  
Lateral Growth

Formation of Titanium Silicide At Atmospheric Pressure

1982 ◽  
Vol 14 ◽  
Author(s):  
Peter Revesz ◽  
Jeno Gyimesi ◽  
Jozsef Gyulai
Keyword(s):  
Silicon Dioxide ◽  
Single Crystal ◽  
Oxide Layer ◽  
Atmospheric Pressure ◽  
Titanium Silicide ◽  
Lateral Growth ◽  
Vertical Growth ◽  
High Doses

ABSTRACTTwo problems connected with the growth of Ti-silicide have been investigated. It is shown if a silicon dioxide step on a single crystal of silicon covered with titanium is annealed then, following vertical growth on the silicon part, lateral growth of Ti-silicide takes place over the oxide layer. We also studied the problems of Ti-silicide growthon samples implanted with high doses of Sb, As, P, Ar and O prior to Ti evaporation.

Lateral growth of titanium silicide over a silicon dioxide layer

1983 ◽  
Vol 54 (4) ◽  
pp. 2114-2115 ◽  
Author(s):  
P. Révész ◽  
J. Gyimesi ◽  
L. Pogány ◽  
G. Petõ
Keyword(s):  
Silicon Dioxide ◽  
Titanium Silicide ◽  
Lateral Growth ◽  
Silicon Dioxide Layer

Scanning Transmission Electron Microscopy of Polyethylene Crystals

1980 ◽  
Vol 38 ◽  
pp. 242-245
Author(s):  
F. Khoury ◽  
L. H. Bolz
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystallization Temperature ◽  
Scanning Transmission Electron Microscopy ◽  
Growth Habit ◽  
Lateral Growth ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Growth Habits

The lateral growth habits and non-planar conformations of polyethylene crystals grown from dilute solutions (<0.1% wt./vol.) are known to vary depending on the crystallization temperature.1-3 With the notable exception of a study by Keith2, most previous studies have been limited to crystals grown at <95°C. The trend in the change of the lateral growth habit of the crystals with increasing crystallization temperature (other factors remaining equal, i.e. polymer mol. wt. and concentration, solvent) is illustrated in Fig.l. The lateral growth faces in the lozenge shaped type of crystal (Fig.la) which is formed at lower temperatures are {110}. Crystals formed at higher temperatures exhibit 'truncated' profiles (Figs. lb,c) and are bound laterally by (110) and (200} growth faces. In addition, the shape of the latter crystals is all the more truncated (Fig.lc), and hence all the more elongated parallel to the b-axis, the higher the crystallization temperature.

Lateral growth of indium(III) selenide nanoribbons and their optoelectronic performance for weak signal detection

2021 ◽  
Vol 546 ◽  
pp. 149166
Author(s):  
Haibo Gan ◽  
Jidong Liu ◽  
Qiaoyan Hao ◽  
Di Wu ◽  
Peng Li ◽  
...  
Keyword(s):  
Signal Detection ◽  
Weak Signal ◽  
Lateral Growth ◽  
Weak Signal Detection

scholarly journals Lateral Growth of MoS 2 2D Material Semiconductors Over an Insulator Via Electrodeposition

2021 ◽  
pp. 2100419
Author(s):  
Nema M. Abdelazim ◽  
Yasir J. Noori ◽  
Shibin Thomas ◽  
Victoria K. Greenacre ◽  
Yisong Han ◽  
...  
Keyword(s):  
Lateral Growth ◽  
2D Material

Suppressing the lateral growth during HVPE-GaN crystallization in the c-direction

2021 ◽  
Vol 556 ◽  
pp. 125986
Author(s):  
Tomasz Sochacki ◽  
Slawomir Sakowski ◽  
Pawel Kempisty ◽  
Mikolaj Amilusik ◽  
Piotr Jaroszynski ◽  
...  
Keyword(s):  
Lateral Growth

Single crystal Cu (110) inducing lateral growth of electrodeposition Li for dendrite-free Li metal-based batteries

2021 ◽  
Vol 501 ◽  
pp. 229969
Author(s):  
Chao Shen ◽  
Jinlei Gu ◽  
Nan Li ◽  
Zuling Peng ◽  
Keyu Xie
Keyword(s):  
Single Crystal ◽  
Lateral Growth
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