X-ray photoemission spectromicroscopy of titanium silicide formation in patterned microstructures

1997 ◽  
Author(s):  
S Singh ◽  
H Solak ◽  
F Cerrina
Keyword(s):  
Titanium Silicide ◽  
Silicide Formation ◽  
X Ray

scholarly journals Titanium Silicide Formation in Presence of Oxygen

1992 ◽  
Vol 15 (1) ◽  
pp. 9-26 ◽  
Author(s):  
C. Nobili ◽  
F. Nava ◽  
G. Ottaviani ◽  
M. Costato ◽  
G. De Santi ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Titanium Silicide ◽  
Silicide Formation ◽  
Metal Oxidation ◽  
X Ray Diffraction ◽  
Amorphous Films ◽  
Titanium Disilicide ◽  
X Ray

In-situ resistivity vs. temperature, Rutherford backscattering spectrometry, Auger electron spectroscopy and X-ray diffraction measurements have been performed in order to study the effects arising from the presence of oxygen in the annealing ambient on the integrity of amorphous films of TiSix, with x ranging from 1.45 to 2.1. Crystalisation occurs around 400 C. The presence of oxygen produces the formation of silicon and titanium oxide around 500 C. Critical analysis of the experimental results have indicated that metal oxidation is inhibited when an excess of silicon is present, which suggests the use of a sputtered Si coating cap as a medium capable of effectively decoupling the silicide film from oxygen. This avoids unwanted Ti oxidation even in heavily oxygen contaminated ambients up to the highest temperatures used for the formation of low resistivity titanium disilicide.

Investigation of titanium silicide formation in Ti+Si reactions using infrared spectroscopy and x‐ray diffraction

1995 ◽  
Vol 77 (10) ◽  
pp. 5156-5159 ◽  
Author(s):  
K. L. Saenger ◽  
C. Cabral ◽  
L. A. Clevenger ◽  
R. A. Roy
Keyword(s):  
Infrared Spectroscopy ◽  
Titanium Silicide ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
X Ray

In Situ Rapid Thermal Hydrogenation Pretreatment of Ti for Salicide RTA

1996 ◽  
Vol 429 ◽  
Author(s):  
K. Ando ◽  
T. Ishigami ◽  
Y. Matsubara ◽  
T. Horiuchi ◽  
S. Nishimoto
Keyword(s):  
Crystal Structure ◽  
Phase Transition ◽  
Diffraction Analysis ◽  
Sheet Resistance ◽  
Rapid Thermal Annealing ◽  
Titanium Silicide ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
X Ray

AbstractAn in situ rapid thermal hydrogenation (RTH) pretreatment of titanium prior to rapid thermal annealing (RTA), or RTH/RTA, is proposed as a silicide formation annealing in a CMOS self-aligned silicide (salicide) process. The in situ RTH is found to enhance silicidation, to reduce nitridation, and even to lower the resultant sheet resistance of titanium silicide.During in situ RTH (e.g., at 550°C), amorphous Ti silicide (e.g., 15-nm thick) grows selectively on Si. Furthermore, Ti nitridation during subsequent RTA (690°C, N2, 10 Torr, 30 s) is reduced depending on RTH (H2, 10 Torr, 30 s) temperature. Accordingly, for 550°C RTH and an initial Ti thickness of 15 nm, the sheet resistance obtained at the 0.27-μm-wide n+ poly-Si gate after a phase transition annealing (800°C, Ar, 10 s) was lower (11.7 Ω /□, st. dev. = 6%) than that of conventional Ti silicide (15.8 Ω/□, st. dev. = 10%). The silicidation enhancement and nitridation reduction are related to crystal structure metamorphosis or to hydrogen interstitial incorporation in the Ti layer during RTH as observed by x-ray diffraction analysis. It is concluded that in situ RTH pretreatment before RTA is very promising as a sub-quarter-micron CMOS salicide process.

Fast in situ X-ray analysis of Ni silicide formation

2017 ◽  
Vol 254 (7) ◽  
pp. 1600859 ◽  
Author(s):  
Peter Zaumseil ◽  
Dirk Wolansky
Keyword(s):  
Silicide Formation ◽  
X Ray

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

Oxygen behavior during titanium silicide formation by rapid thermal annealing

1987 ◽  
Vol 62 (10) ◽  
pp. 4319-4321 ◽  
Author(s):  
R. Pantel ◽  
D. Levy ◽  
D. Nicolas ◽  
J. P. Ponpon
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Titanium Silicide ◽  
Silicide Formation

Characteristics of Selective Lpcvd W Films By Silicon Reduction

1986 ◽  
Vol 71 ◽  
Author(s):  
R. V. Joshi ◽  
D. A. Smith
Keyword(s):  
Crystal Structure ◽  
Grain Size ◽  
Annealing Temperature ◽  
Film Surface ◽  
Silicide Formation ◽  
X Ray ◽  
Tungsten Hexafluoride ◽  
Deposited Film ◽  
Deposited Films ◽  
Oxygen Impurities

AbstractThe characteristics of Selective LPCVD tungsten films produced by silicon reduction of tungsten hexafluoride are presented. The tungsten films deposited using Si(100), Si(111) and polysilicon undoped and doped substrates are analyzed by X-RAY, TEM, RBS, AES, SIMS and SEM. The as deposited bcc tungsten films are polycrystalline with a grain size 80 - 100Å. The effect of annealing temperature and time on the crystal structure of films was studied. Tungsten reacts to form tungsten silicide at 600°C. The silicide grain size is of the order of 100 - 200Å at 600°C and increases gradually to 400 - 500Å at 1000°C. The oxygen impurities in the film retard the silicide formation further at 1000°C. Silicon from the substrate out-diffuses to the film surface and reacts with the presence of oxygen impurities in the annealing ambient to form Si-O at 1000°C. As deposited film resistivities of 130-140 micro-ohm-cm are achieved reproducibly and reach 60-70 micro-ohm-cm after 1000°C annealing in nitrogen or argon ambient. The impurities H, C, O and F are found in the as deposited films.

Silicide Formation in High-Dose Fe-Implanted Silicon

1991 ◽  
Vol 235 ◽  
Author(s):  
Z. Tan ◽  
F. Namavar ◽  
S. M. Heald ◽  
J. I. Budnick ◽  
F. H. Sanchez
Keyword(s):  
Fine Structure ◽  
Single Phase ◽  
Rutherford Backscattering Spectrometry ◽  
High Dose ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Implantation Damage ◽  
X Ray Absorption ◽  
Post Implantation

ABSTRACTWe have studied the silicide formation in Fe-implanted Si(100), with 1×1017-1×1018 Fe/cm2, using extended x-ray-absorption fine structure (EXAFS), x-ray diffraction and Rutherford backscattering spectrometry (RBS) methods. In the samples as-implanted at 350 °C, no silicide was observed at doses below 3×1017 Fe/cm2. At 5×1017 Fe/cm2, both α-FeSi2 and (β-FeSi2 form but α-FeSi2 appears to be the majority phase. As the dose increases to 7×1017 and above, ordered FeSi forms, but implantation damage is severe and a large number of Fe atoms are in very disordered environments. In addition to FeSi, Fe5Si3 was also observed in the 1×1018 Fe/cm2 sample. Upon post-implantation annealing at 700 °C or 900 °C, single phase P-FeSi2 was obtained independent of the dosage.

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