Highly Reliable Thin Silicon Dioxide Layers Grown on Heavily Phosphorus Doped Poly‐Si by Rapid Thermal Oxidation

1990 ◽  
Vol 137 (7) ◽  
pp. 2261-2265 ◽  
Author(s):  
Kiyonori Ohyu ◽  
Yasuo Wade ◽  
Shinpei Iijima ◽  
Nobuyoshi Natsuaki
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Thin Silicon ◽  
Phosphorus Doped

Thin Silicon Dioxide Using the Rapid Thermal Oxidation (RTO) Process for Trench Capacitors

1988 ◽  
Vol 135 (1) ◽  
pp. 150-155 ◽  
Author(s):  
Yukio Miyai ◽  
Kenji Yoneda ◽  
Hiroshi Oishi ◽  
Hirofumi Uchida ◽  
Morio Inoue
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Thin Silicon

ChemInform Abstract: Thin Silicon Dioxide Using the Rapid Thermal Oxidation (RTO) Process for Trench Capacitors.

ChemInform ◽  
1988 ◽  
Vol 19 (18) ◽  
Author(s):  
Y. MIYAI ◽  
K. YONEDA ◽  
H. OISHI ◽  
H. UCHIDA ◽  
M. INOUE
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Thin Silicon

Tunneling Current in Thin Silicon Dioxide Films

1994 ◽  
Vol 342 ◽  
Author(s):  
Sufi Zafar ◽  
J. C. Poler ◽  
E. A. Irene ◽  
X. Xu ◽  
G. Haines ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Electric Fields ◽  
Tunneling Current ◽  
Chemical Vapor ◽  
Silicon Dioxide Films ◽  
Thin Silicon ◽  
Tunneling Currents ◽  
Dc Component ◽  
P Type

ABSTRACTTunneling currents through thin silicon dioxide films on p-type silicon are measured at electric fields greater than 5 MV/cm. At the onset of the Fowler-Nordheim tunneling, oscillations in the current are observed. These oscillations are used for characterizing oxide films grown by three different processes: rapid thermal chemical vapor deposition, rapid thermal oxidation and thermal oxidation. We have explored the correlation between the oscillatory tunneling currents and the breakdown fields, and find a low field dc component to correlate with the breakdown fields and obscure the oscillations.

Thermal oxidation of silicon in a residual oxygen atmosphere—the RESOX process—for self-limiting growth of thin silicon dioxide films

2016 ◽  
Vol 31 (10) ◽  
pp. 105007 ◽  
Author(s):  
Jason T Wright ◽  
Daniel J Carbaugh ◽  
Morgan E Haggerty ◽  
Andrea L Richard ◽  
David C Ingram ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Oxygen Atmosphere ◽  
Residual Oxygen ◽  
Silicon Dioxide Films ◽  
Thin Silicon
Sign in / Sign up

Export Citation Format

Share Document