Growth characteristics of silicon dioxide produced by rapid thermal oxidation processes

1990 ◽  
Vol 57 (9) ◽  
pp. 881-883 ◽  
Author(s):  
Y. L. Chiou ◽  
C. H. Sow ◽  
G. Li ◽  
K. A. Ports
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Growth Characteristics ◽  
Oxidation Processes ◽  
Rapid Thermal Oxidation

Thin Silicon Dioxide Using the Rapid Thermal Oxidation (RTO) Process for Trench Capacitors

1988 ◽  
Vol 135 (1) ◽  
pp. 150-155 ◽  
Author(s):  
Yukio Miyai ◽  
Kenji Yoneda ◽  
Hiroshi Oishi ◽  
Hirofumi Uchida ◽  
Morio Inoue
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Thin Silicon

Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 591-594 ◽  
Author(s):  
Matthieu Florentin ◽  
Josep Montserrat ◽  
Pierre Brosselard ◽  
Anne Henry ◽  
Philippe Godignon
Keyword(s):  
Surface Roughness ◽  
Thermal Oxidation ◽  
Oxidation Process ◽  
Lower Surface ◽  
Epitaxial Layers ◽  
Oxidation Processes ◽  
Rapid Thermal Oxidation ◽  
P Type ◽  
Mos Structures

This paper deals with the comparison of several MOS structures with different rapid thermal oxidation processes (RTO) carried out on Off and On-axis SiC material. A first set contains MOS capacitance structures on n-epitaxial layers, while a second set of MOS capacitance are built on p-implanted layers. Both sets include On and Off-Axis angle cuts. Furthermore, n-MOSFETs have been fabricated on On-axis p-implanted layers with the best oxidation process selected from the MOS capacitance study. The final objective is to show the performances of these On-axis p-implanted n-MOSFETs and to evidence the associated lower surface roughness at the SiO2/SiC interface.

ChemInform Abstract: Thin Silicon Dioxide Using the Rapid Thermal Oxidation (RTO) Process for Trench Capacitors.

ChemInform ◽  
1988 ◽  
Vol 19 (18) ◽  
Author(s):  
Y. MIYAI ◽  
K. YONEDA ◽  
H. OISHI ◽  
H. UCHIDA ◽  
M. INOUE
Keyword(s):  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Thin Silicon

Residual Stress Measurement in Silicon Substrate After Local Thermal Oxidation Using Microscopic Raman Spectroscopy

1991 ◽  
Vol 226 ◽  
Author(s):  
Hideo Miura ◽  
Hiroshi Sakata ◽  
Shinji Sakata Merl
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Oxide Film ◽  
Film Thickness ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Silicon Substrate ◽  
Nitride Film ◽  
Oxide Film Thickness

AbstractThe residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.

Rapid Thermal Oxidation of Lightly Doped Silicon in N2O

1994 ◽  
Vol 342 ◽  
Author(s):  
S.C. Sun ◽  
L.S. Wang ◽  
F.L. Yeh ◽  
T.S. Lai ◽  
Y.H. Lin
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Charge Trapping ◽  
Interface State ◽  
Constant Current ◽  
Mos Capacitor ◽  
Rapid Thermal Oxidation ◽  
Doped Silicon ◽  
State Generation ◽  
First Time

ABSTRACTIn this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N2O and O2 on (100), (110), and (111) oriented substrates. It was found that (110)-oriented Si has the highest growth rate in both N2O and dry O2, and (100) Si has the lowest rate. There is no “crossover” on the growth rate of rapid thermal N2O oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N2O. Pressure dependence of rapid thermal N2O oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N2O-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N2O or O2 ambient.

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