Magnesium as p Dopant in InGaAs / InP Heterojunction Bipolar Transistors Grown by Metalorganic Vapor Phase Epitaxy

1992 ◽  
Vol 139 (4) ◽  
pp. 1193-1195 ◽  
Author(s):  
F. Dildey ◽  
M. Schier ◽  
G. Ebbinghaus
Keyword(s):  
Vapor Phase ◽  
Heterojunction Bipolar Transistors ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Bipolar Transistors ◽  
Vapor Phase Epitaxy

Heterojunction bipolar transistors in AlGaInP/GaAs grown by metalorganic vapor phase epitaxy

1994 ◽  
Vol 76 (12) ◽  
pp. 8135-8141 ◽  
Author(s):  
H. K. Yow ◽  
P. A. Houston ◽  
C. C. Button ◽  
T.‐W. Lee ◽  
J. S. Roberts
Keyword(s):  
Vapor Phase ◽  
Heterojunction Bipolar Transistors ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Bipolar Transistors ◽  
Vapor Phase Epitaxy

High performance InP/InGaAs heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy

1989 ◽  
Vol 55 (2) ◽  
pp. 171-172 ◽  
Author(s):  
R. N. Nottenburg ◽  
Y. K. Chen ◽  
T. Tanbun‐Ek ◽  
R. A. Logan ◽  
D. A. Humphrey
Keyword(s):  
Vapor Phase ◽  
High Performance ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Bipolar Transistors ◽  
Vapor Phase Epitaxy

Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors

1999 ◽  
Vol 74 (7) ◽  
pp. 976-978 ◽  
Author(s):  
X. G. Xu ◽  
J. Hu ◽  
S. P. Watkins ◽  
N. Matine ◽  
M. W. Dvorak ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Bipolar Transistors ◽  
Vapor Phase Epitaxy ◽  
High Quality
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