High‐performance Zn‐doped‐base InP/InGaAs double‐heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy
1992 ◽
Vol 139
(4)
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pp. 1193-1195
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2006 ◽
Vol 24
(3)
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pp. 1564
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1994 ◽
Vol 41
(8)
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pp. 1319-1326
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