Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors

1999 ◽  
Vol 74 (7) ◽  
pp. 976-978 ◽  
Author(s):  
X. G. Xu ◽  
J. Hu ◽  
S. P. Watkins ◽  
N. Matine ◽  
M. W. Dvorak ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Bipolar Transistors ◽  
Vapor Phase Epitaxy ◽  
High Quality

RETRACTED: High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy

2013 ◽  
Vol 366 ◽  
pp. 35-38 ◽  
Author(s):  
Yuantao Zhang ◽  
Xin Dong ◽  
Guoxing Li ◽  
Wancheng Li ◽  
Baolin Zhang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Two Dimensional ◽  
High Quality ◽  
Dimensional Growth

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (9) ◽  
pp. 095502 ◽  
Author(s):  
Yuki Shimahara ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Fumitsugu Fukuyo ◽  
Tomoyuki Okada ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Doped

Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 42 (Part 1, No. 8) ◽  
pp. 4913-4918 ◽  
Author(s):  
Chin-I Liao ◽  
Kao-Feng Yarn ◽  
Chien-Lien Lin ◽  
Yu-Lu Lin ◽  
Yeong-Her Wang
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Gaas Substrates ◽  
Direct Growth

High performance InP/InGaAs heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy

1989 ◽  
Vol 55 (2) ◽  
pp. 171-172 ◽  
Author(s):  
R. N. Nottenburg ◽  
Y. K. Chen ◽  
T. Tanbun‐Ek ◽  
R. A. Logan ◽  
D. A. Humphrey
Keyword(s):  
Vapor Phase ◽  
High Performance ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Bipolar Transistors ◽  
Vapor Phase Epitaxy

scholarly journals High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

AIP Advances ◽  
2012 ◽  
Vol 2 (4) ◽  
pp. 042154 ◽  
Author(s):  
Kazuo Uchida ◽  
Ken-ichi Yoshida ◽  
Dongyuan Zhang ◽  
Atsushi Koizumi ◽  
Shinji Nozaki
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Single Crystalline

High-Quality (211)B CdTe on (211)Si Substrates Using Metalorganic Vapor-Phase Epitaxy

2011 ◽  
Vol 40 (8) ◽  
pp. 1790-1794 ◽  
Author(s):  
S. R. Rao ◽  
S. S. Shintri ◽  
J. K. Markunas ◽  
R. N. Jacobs ◽  
I. B. Bhat
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Substrates

Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1961-1965 ◽  
Author(s):  
Akihiko Ishibashi ◽  
Hidemi Takeishi ◽  
Nobuyuki Uemura ◽  
Masahiro Kume ◽  
Yasufumi Yabuuchi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Quantum Well Structure
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