High-temperature DC characteristics of Al/sub x/Ga/sub 0.52-x/In/sub 0.48/P/GaAs heterojunction bipolar transistors grown by metal organic vapor phase epitaxy

1996 ◽  
Vol 43 (1) ◽  
pp. 2-7 ◽  
Author(s):  
Ho-Kwang Yow ◽  
P.A. Houston ◽  
Chee-Mun Sidney Ng ◽  
C. Button ◽  
J.S. Roberts
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Dc Characteristics ◽  
Metal Organic

High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DH07 ◽  
Author(s):  
Momoko Deura ◽  
Yoshiyuki Kondo ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi ◽  
Yukihiro Shimogaki ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Annealing Effect ◽  
High Temperature Annealing ◽  
Group V ◽  
Organic Vapor ◽  
Metal Organic

Aluminum Nitride Micro-Channels Grown via Metal Organic Vapor Phase Epitaxy for MEMs Applications

2007 ◽  
Vol 1040 ◽  
Author(s):  
L. E. Rodak ◽  
Sridhar Kuchibhatla ◽  
P. Famouri ◽  
Ting Liu ◽  
D. Korakakis
Keyword(s):  
High Temperature ◽  
Aluminum Nitride ◽  
Silicon Dioxide ◽  
Vapor Phase ◽  
High Energy ◽  
Vapor Phase Epitaxy ◽  
Micro Channel ◽  
Organic Vapor ◽  
Micro Channels ◽  
Metal Organic

AbstractAluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nano-electromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro- channels for fuel cell applications, and micromechanical resonators.This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficient and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 ìm to 110 ìm and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.

Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates

2008 ◽  
Vol 310 (7-9) ◽  
pp. 2308-2313 ◽  
Author(s):  
Masataka Imura ◽  
Hiroki Sugimura ◽  
Narihito Okada ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Organic Vapor ◽  
Metal Organic

Impact of High‐Temperature Annealing on Boron Containing AlN Layers Grown by Metal Organic Vapor Phase Epitaxy

2020 ◽  
Vol 217 (16) ◽  
pp. 2000251
Author(s):  
Oliver Rettig ◽  
Ferdinand Scholz ◽  
Yueliang Li ◽  
Johannes Biskupek ◽  
Ute Kaiser ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Temperature Annealing ◽  
Organic Vapor ◽  
Metal Organic

Mg-doped high-quality AlxGa1–xN (x=0-1) grown by high-temperature metal-organic vapor phase epitaxy

2007 ◽  
Vol 4 (7) ◽  
pp. 2502-2505 ◽  
Author(s):  
M. Imura ◽  
N. Kato ◽  
N. Okada ◽  
K. Balakrishnan ◽  
M. Iwaya ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Organic Vapor ◽  
Metal Organic ◽  
Mg Doped

Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy

2006 ◽  
Vol 89 (22) ◽  
pp. 221901 ◽  
Author(s):  
M. Imura ◽  
K. Nakano ◽  
T. Kitano ◽  
N. Fujimoto ◽  
G. Narita ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

2007 ◽  
Vol 46 (4A) ◽  
pp. 1458-1462 ◽  
Author(s):  
Masataka Imura ◽  
Kiyotaka Nakano ◽  
Naoki Fujimoto ◽  
Narihito Okada ◽  
Krishnan Balakrishnan ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (4) ◽  
pp. 04DH07 ◽  
Author(s):  
Momoko Deura ◽  
Yoshiyuki Kondo ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi ◽  
Yukihiro Shimogaki ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Annealing Effect ◽  
High Temperature Annealing ◽  
Group V ◽  
Organic Vapor ◽  
Metal Organic

Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy

2006 ◽  
Vol 45 (4A) ◽  
pp. 2502-2504 ◽  
Author(s):  
Narihito Okada ◽  
Naoki Fujimoto ◽  
Tsukasa Kitano ◽  
Gou Narita ◽  
Masataka Imura ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic
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