Organometallic vapor phase epitaxy of AlGaAs/GaAs heterojunction bipolar transistors using tertiarybutylarsine

T. S. Kim; B. Bayraktaroglu; T. S. Henderson; D. L. Plumton

doi:10.1063/1.105044

Organometallic vapor phase epitaxy of AlGaAs/GaAs heterojunction bipolar transistors using tertiarybutylarsine

Applied Physics Letters ◽

10.1063/1.105044 ◽

1991 ◽

Vol 58 (18) ◽

pp. 1997-1999 ◽

Cited By ~ 15

Author(s):

T. S. Kim ◽

B. Bayraktaroglu ◽

T. S. Henderson ◽

D. L. Plumton

Keyword(s):

Vapor Phase ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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InP/InGaAs double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy with sulfur delta doping in the collector region

Applied Physics Letters ◽

10.1063/1.104107 ◽

1990 ◽

Vol 57 (26) ◽

pp. 2841-2843 ◽

Cited By ~ 33

Author(s):

E. Tokumitsu ◽

A. G. Dentai ◽

C. H. Joyner ◽

S. Chandrasekhar

Keyword(s):

Vapor Phase ◽

Heterojunction Bipolar Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Bipolar Transistors ◽

Vapor Phase Epitaxy ◽

Delta Doping ◽

Double Heterojunction ◽

Collector Region

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High-temperature DC characteristics of Al/sub x/Ga/sub 0.52-x/In/sub 0.48/P/GaAs heterojunction bipolar transistors grown by metal organic vapor phase epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/16.477586 ◽

1996 ◽

Vol 43 (1) ◽

pp. 2-7 ◽

Cited By ~ 16

Author(s):

Ho-Kwang Yow ◽

P.A. Houston ◽

Chee-Mun Sidney Ng ◽

C. Button ◽

J.S. Roberts

Keyword(s):

High Temperature ◽

Vapor Phase ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Vapor Phase Epitaxy ◽

Organic Vapor ◽

Dc Characteristics ◽

Metal Organic

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Heterojunction bipolar transistors in AlGaInP/GaAs grown by metalorganic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.357864 ◽

1994 ◽

Vol 76 (12) ◽

pp. 8135-8141 ◽

Cited By ~ 16

Author(s):

H. K. Yow ◽

P. A. Houston ◽

C. C. Button ◽

T.‐W. Lee ◽

J. S. Roberts

Keyword(s):

Vapor Phase ◽

Heterojunction Bipolar Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Bipolar Transistors ◽

Vapor Phase Epitaxy

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Magnesium as p Dopant in InGaAs / InP Heterojunction Bipolar Transistors Grown by Metalorganic Vapor Phase Epitaxy

Journal of The Electrochemical Society ◽

10.1149/1.2069364 ◽

1992 ◽

Vol 139 (4) ◽

pp. 1193-1195 ◽

Cited By ~ 2

Author(s):

F. Dildey ◽

M. Schier ◽

G. Ebbinghaus

Keyword(s):

Vapor Phase ◽

Heterojunction Bipolar Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Bipolar Transistors ◽

Vapor Phase Epitaxy

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High-current-gain InGaAs/InP double-heterojunction bipolar transistors grown by metal organic vapor phase epitaxy

IEEE Electron Device Letters ◽

10.1109/55.707 ◽

1988 ◽

Vol 9 (5) ◽

pp. 253-255 ◽

Cited By ~ 32

Author(s):

O. Sugiura ◽

A.G. Dentai ◽

C.H. Joyner ◽

S. Chandrasekhar ◽

J.C. Campbell

Keyword(s):

Vapor Phase ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Vapor Phase Epitaxy ◽

Current Gain ◽

High Current ◽

Organic Vapor ◽

Double Heterojunction ◽

Metal Organic

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High‐performance Zn‐doped‐base InP/InGaAs double‐heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.110844 ◽

1994 ◽

Vol 64 (9) ◽

pp. 1111-1113 ◽

Cited By ~ 15

Author(s):

K. Kurishima ◽

H. Nakajima ◽

S. Yamahata ◽

T. Kobayashi ◽

Y. Matsuoka

Keyword(s):

Vapor Phase ◽

Heterojunction Bipolar Transistors ◽

High Performance ◽

Metalorganic Vapor Phase Epitaxy ◽

Bipolar Transistors ◽

Vapor Phase Epitaxy ◽

Double Heterojunction

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ChemInform Abstract: Magnesium as p Dopant in InGaAs/InP Heterojunction Bipolar Transistors Grown by Metalorganic Vapor Phase Epitaxy

ChemInform ◽

10.1002/chin.199228291 ◽

2010 ◽

Vol 23 (28) ◽

pp. no-no

Author(s):

F. DILDEY ◽

M. SCHIER ◽

G. EBBINGHAUS

Keyword(s):

Vapor Phase ◽

Heterojunction Bipolar Transistors ◽

Metalorganic Vapor Phase Epitaxy ◽

Bipolar Transistors ◽

Vapor Phase Epitaxy

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Novel Precursors for Organometallic Vapor Phase Epitaxy

10.21236/ada251340 ◽

1992 ◽

Author(s):

G. B. Stringfellow

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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Ultrahigh mobility two‐dimensional electron gas in AlxGa1−xAs/GaAs heterostructures by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.110614 ◽

1993 ◽

Vol 63 (14) ◽

pp. 1960-1962 ◽

Cited By ~ 3

Author(s):

Ricardo Basco ◽

Farid Agahi ◽

Kei May Lau

Keyword(s):

Vapor Phase ◽

Electron Gas ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas

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Strong photoluminescence from AlP/GaP disordered superlattice grown by atmospheric pressure organometallic vapor phase epitaxy using tertiarybutylphosphine

Applied Physics Letters ◽

10.1063/1.108556 ◽

1993 ◽

Vol 62 (8) ◽

pp. 888-890 ◽

Cited By ~ 27

Author(s):

Xue‐Lun Wang ◽

Akihiro Wakahara ◽

Akio Sasaki

Keyword(s):

Vapor Phase ◽

Atmospheric Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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