Deposition and Properties of Low‐Pressure Chemical‐Vapor Deposited Polycrystalline Silicon‐Germanium Films

Tsu‐Jae King; Krishna C. Saraswat

doi:10.1149/1.2055095

Deposition and Properties of Low‐Pressure Chemical‐Vapor Deposited Polycrystalline Silicon‐Germanium Films

Journal of The Electrochemical Society ◽

10.1149/1.2055095 ◽

1994 ◽

Vol 141 (8) ◽

pp. 2235-2241 ◽

Cited By ~ 79

Author(s):

Tsu‐Jae King ◽

Krishna C. Saraswat

Keyword(s):

Silicon Germanium ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Germanium Films

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ChemInform Abstract: Deposition and Properties of Low-Pressure Chemical-Vapor Deposited Polycrystalline Silicon-Germanium Films.

ChemInform ◽

10.1002/chin.199448258 ◽

2010 ◽

Vol 25 (48) ◽

pp. no-no

Author(s):

T.-J. KING ◽

K. C. SARASWAT

Keyword(s):

Silicon Germanium ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Germanium Films

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Polycrystalline silicon–germanium films on oxide using plasma‐enhanced very‐low‐pressure chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.113329 ◽

1995 ◽

Vol 66 (14) ◽

pp. 1809-1811 ◽

Cited By ~ 19

Author(s):

Julie A. Tsai ◽

Rafael Reif

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Silicon Germanium ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical ◽

Germanium Films

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Annealing and oxidation behavior of low‐pressure chemical vapor deposited tungsten slicide layers on polycrystalline silicon gates

Journal of Applied Physics ◽

10.1063/1.339414 ◽

1987 ◽

Vol 62 (7) ◽

pp. 2830-2835 ◽

Cited By ~ 10

Author(s):

D. K. Sadana ◽

A. E. Morgan ◽

M. H. Norcott ◽

S. Naik

Keyword(s):

Polycrystalline Silicon ◽

Oxidation Behavior ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Influence of deposition pressure on the bulk and interface states in low pressure chemical vapor deposited polycrystalline silicon thin‐film transistors

Applied Physics Letters ◽

10.1063/1.111473 ◽

1994 ◽

Vol 64 (20) ◽

pp. 2709-2711 ◽

Cited By ~ 6

Author(s):

C. A. Dimitriadis ◽

D. H. Tassis ◽

N. A. Economou ◽

G. Giakoumakis

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Interface States ◽

Deposition Pressure ◽

Silicon Thin Film ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films

Journal of Applied Physics ◽

10.1063/1.339924 ◽

1988 ◽

Vol 63 (5) ◽

pp. 1442-1447 ◽

Cited By ~ 105

Author(s):

Y. C. Tai ◽

C. H. Mastrangelo ◽

R. S. Muller

Keyword(s):

Thermal Conductivity ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Heavily Doped ◽

Polycrystalline Silicon Films

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Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon–germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases

Journal of Applied Physics ◽

10.1063/1.367404 ◽

1998 ◽

Vol 83 (10) ◽

pp. 5469-5476 ◽

Cited By ~ 10

Author(s):

V. Z-Q Li ◽

M. R. Mirabedini ◽

B. E. Hornung ◽

H. H. Heinisch ◽

M. Xu ◽

...

Keyword(s):

Silicon Germanium ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Structure And Properties ◽

Chemical Vapor Deposited ◽

Germanium Films

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Effects of temperature and electrical stress on the performance of thin‐film transistors fabricated from undoped low‐pressure chemical vapor deposited polycrystalline silicon

Applied Physics Letters ◽

10.1063/1.100897 ◽

1989 ◽

Vol 54 (7) ◽

pp. 620-622 ◽

Cited By ~ 33

Author(s):

C. A. Dimitriadis ◽

P. A. Coxon

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Electrical Stress ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Effects Of Temperature

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Lateral diffusion of arsenic in low pressure chemical vapor deposited polycrystalline silicon

Applied Physics Letters ◽

10.1063/1.93863 ◽

1983 ◽

Vol 42 (2) ◽

pp. 171-172 ◽

Cited By ~ 7

Author(s):

N. Lewis ◽

G. Gildenblat ◽

M. Ghezzo ◽

W. Katz ◽

G. A. Smith

Keyword(s):

Polycrystalline Silicon ◽

Lateral Diffusion ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Crystallization of amorphous silicon–germanium films deposited by low pressure chemical vapor deposition

Journal of Non-Crystalline Solids ◽

10.1016/s0022-3093(99)00784-x ◽

2000 ◽

Vol 266-269 ◽

pp. 689-693 ◽

Cited By ~ 2

Author(s):

D Guillet ◽

M Sarret ◽

L Haji ◽

R Rogel ◽

O Bonnaud

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Silicon Germanium ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical ◽

Germanium Films ◽

Amorphous Silicon Germanium

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Characterization of phosphorus implanted low pressure chemical vapor deposited polycrystalline silicon

Solid-State Electronics ◽

10.1016/0038-1101(79)90005-4 ◽

1979 ◽

Vol 22 (12) ◽

pp. 1017-1024 ◽

Cited By ~ 8

Author(s):

Giora Yaron

Keyword(s):

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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