Lateral diffusion of arsenic in low pressure chemical vapor deposited polycrystalline silicon

N. Lewis; G. Gildenblat; M. Ghezzo; W. Katz; G. A. Smith

doi:10.1063/1.93863

Lateral diffusion of arsenic in low pressure chemical vapor deposited polycrystalline silicon

Applied Physics Letters ◽

10.1063/1.93863 ◽

1983 ◽

Vol 42 (2) ◽

pp. 171-172 ◽

Cited By ~ 7

Author(s):

N. Lewis ◽

G. Gildenblat ◽

M. Ghezzo ◽

W. Katz ◽

G. A. Smith

Keyword(s):

Polycrystalline Silicon ◽

Lateral Diffusion ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Annealing and oxidation behavior of low‐pressure chemical vapor deposited tungsten slicide layers on polycrystalline silicon gates

Journal of Applied Physics ◽

10.1063/1.339414 ◽

1987 ◽

Vol 62 (7) ◽

pp. 2830-2835 ◽

Cited By ~ 10

Author(s):

D. K. Sadana ◽

A. E. Morgan ◽

M. H. Norcott ◽

S. Naik

Keyword(s):

Polycrystalline Silicon ◽

Oxidation Behavior ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Influence of deposition pressure on the bulk and interface states in low pressure chemical vapor deposited polycrystalline silicon thin‐film transistors

Applied Physics Letters ◽

10.1063/1.111473 ◽

1994 ◽

Vol 64 (20) ◽

pp. 2709-2711 ◽

Cited By ~ 6

Author(s):

C. A. Dimitriadis ◽

D. H. Tassis ◽

N. A. Economou ◽

G. Giakoumakis

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Interface States ◽

Deposition Pressure ◽

Silicon Thin Film ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films

Journal of Applied Physics ◽

10.1063/1.339924 ◽

1988 ◽

Vol 63 (5) ◽

pp. 1442-1447 ◽

Cited By ~ 105

Author(s):

Y. C. Tai ◽

C. H. Mastrangelo ◽

R. S. Muller

Keyword(s):

Thermal Conductivity ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Heavily Doped ◽

Polycrystalline Silicon Films

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Effects of temperature and electrical stress on the performance of thin‐film transistors fabricated from undoped low‐pressure chemical vapor deposited polycrystalline silicon

Applied Physics Letters ◽

10.1063/1.100897 ◽

1989 ◽

Vol 54 (7) ◽

pp. 620-622 ◽

Cited By ~ 33

Author(s):

C. A. Dimitriadis ◽

P. A. Coxon

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Electrical Stress ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Effects Of Temperature

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ChemInform Abstract: Deposition and Properties of Low-Pressure Chemical-Vapor Deposited Polycrystalline Silicon-Germanium Films.

ChemInform ◽

10.1002/chin.199448258 ◽

2010 ◽

Vol 25 (48) ◽

pp. no-no

Author(s):

T.-J. KING ◽

K. C. SARASWAT

Keyword(s):

Silicon Germanium ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Germanium Films

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Characterization of phosphorus implanted low pressure chemical vapor deposited polycrystalline silicon

Solid-State Electronics ◽

10.1016/0038-1101(79)90005-4 ◽

1979 ◽

Vol 22 (12) ◽

pp. 1017-1024 ◽

Cited By ~ 8

Author(s):

Giora Yaron

Keyword(s):

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films

Journal of Applied Physics ◽

10.1063/1.341065 ◽

1988 ◽

Vol 63 (7) ◽

pp. 2260-2266 ◽

Cited By ~ 271

Author(s):

Miltiadis K. Hatalis ◽

David W. Greve

Keyword(s):

Low Temperature ◽

Amorphous Silicon ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Low Temperature Annealing ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films

Vacuum ◽

10.1016/0042-207x(89)90915-9 ◽

1989 ◽

Vol 39 (10) ◽

pp. 992

Keyword(s):

Low Temperature ◽

Amorphous Silicon ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Low Temperature Annealing ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Fracture toughness of low-pressure chemical-vapor-deposited polycrystalline silicon carbide thin films

Journal of Applied Physics ◽

10.1063/1.2158135 ◽

2006 ◽

Vol 99 (1) ◽

pp. 013517 ◽

Cited By ~ 18

Author(s):

V. Hatty ◽

H. Kahn ◽

J. Trevino ◽

C. A. Zorman ◽

M. Mehregany ◽

...

Keyword(s):

Thin Films ◽

Fracture Toughness ◽

Silicon Carbide ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Polycrystalline Silicon Carbide ◽

Pressure Chemical

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High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline silicon

Journal of Non-Crystalline Solids ◽

10.1016/s0022-3093(00)00013-2 ◽

2000 ◽

Vol 266-269 ◽

pp. 141-145 ◽

Cited By ~ 6

Author(s):

R Rogel ◽

M Sarret ◽

T Mohammed-Brahim ◽

O Bonnaud ◽

J.P Kleider

Keyword(s):

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

High Quality ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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