Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon–germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases

1998 ◽  
Vol 83 (10) ◽  
pp. 5469-5476 ◽  
Author(s):  
V. Z-Q Li ◽  
M. R. Mirabedini ◽  
B. E. Hornung ◽  
H. H. Heinisch ◽  
M. Xu ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Structure And Properties ◽  
Chemical Vapor Deposited ◽  
Germanium Films

Low Temperature (≤550°C) Fabrication of CMOS TFT's on Rapid-Thermal CVD Polycrystalline Silicon-Germanium Films

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1389-1393 ◽  
Author(s):  
Seo-Kyu Lee ◽  
Seong-Min Choe ◽  
Chang-Geun Ahn ◽  
Wook-Jin Chung ◽  
Young-Kyu Kwon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Thermal Cvd ◽  
Germanium Films

scholarly journals Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Cesar Calleja ◽  
Alfonso Torres ◽  
Pedro Rosales-Quintero ◽  
Mario Moreno
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Chemical Vapor ◽  
Focal Plane Arrays ◽  
Large Temperature ◽  
Thermal Coefficient ◽  
Thermal Detectors ◽  
Germanium Films ◽  
Amorphous Silicon Germanium ◽  
Very High

We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD) reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR), which is a signature of the sensitivity in thermal detectors (microbolometers). Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1). Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs) used in commercial thermal cameras.

Electrical properties of heavily doped polycrystalline silicon-germanium films

1994 ◽  
Vol 41 (2) ◽  
pp. 228-232 ◽  
Author(s):  
T.-J. King ◽  
J.P. McVittie ◽  
K.C. Saraswat ◽  
J.R. Pfiester
Keyword(s):  
Electrical Properties ◽  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Heavily Doped ◽  
Germanium Films
Sign in / Sign up

Export Citation Format

Share Document