Physical and Electrical Characteristics of Thin Silicon Nitride Dielectric Films Deposited on Smooth and Rugged Polycrystalline Silicon after Rapid Thermal Nitridation

1994 ◽  
Vol 141 (4) ◽  
pp. 1066-1070 ◽  
Author(s):  
Viju K. Mathews ◽  
Akram Ditali ◽  
Pierre C. Fazan
Keyword(s):  
Silicon Nitride ◽  
Polycrystalline Silicon ◽  
Dielectric Films ◽  
Electrical Characteristics ◽  
Thin Silicon ◽  
Thermal Nitridation

Influence of Surface Preparation Prior to Thermal Nitridation on the Electrical Characteristics of Silicon Nitride Films Deposited on Polycrystalline Silicon Films

1992 ◽  
Vol 284 ◽  
Author(s):  
Viju K. Mathews ◽  
Randhir P.S. Thakur ◽  
Akram Ditali ◽  
Pierre C. Fazan
Keyword(s):  
Silicon Nitride ◽  
Polycrystalline Silicon ◽  
Dielectric Breakdown ◽  
Silicon Film ◽  
Surface Preparation ◽  
Silicon Dioxide Film ◽  
Time Dependent Dielectric Breakdown ◽  
Pre Treatment ◽  
Thermal Nitridation ◽  
Polycrystalline Silicon Films

ABSTRACTRapid thermal nitridation of the polycrystalline silicon film prior to the deposition of the silicon nitride dielectric film has been shown to be very effective in improving the dielectric characteristics for thin films. The changes at the polysilicon-silicon nitride interface has been further investigated using an in-situ clean process. This pre-treatment reduces the oxygen levels at the interface and improves the time dependent dielectric breakdown. The leakage current increases slightly due to the thinning of the silicon dioxide film at the interface.

scholarly journals Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

Micro ◽  
2021 ◽  
Vol 1 (2) ◽  
pp. 228-241
Author(s):  
Benjamin Richstein ◽  
Lena Hellmich ◽  
Joachim Knoch
Keyword(s):  
Silicon Nitride ◽  
Fermi Level ◽  
Schottky Barrier ◽  
Schottky Diodes ◽  
Nitride Layer ◽  
Interface Engineering ◽  
Fermi Level Pinning ◽  
Thin Silicon ◽  
Thermal Nitridation ◽  
Nitride Layers

Problems with doping in nanoscale devices or low temperature applications are widely known. Our approach to replace the degenerate doping in source/drain (S/D)-contacts is silicon nitride interface engineering. We measured Schottky diodes and MOSFETs with very thin silicon nitride layers in between silicon and metal. Al/SiN/p-Si diodes show Fermi level depinning with increasing SiN thickness. The diode fabricated with rapid thermal nitridation at 900 ∘C reaches the theoretical value of the Schottky barrier to the conduction band ΦSB,n=0.2 eV. As a result, the contact resistivity decreases and the ambipolar behavior can be suppressed. Schottky barrier MOSFETs with depinned S/D-contacts consisting of a thin silicon nitride layer and contact metals with different work functions are fabricated to demonstrate unipolar behavior. We presented n-type behavior with Al and p-type behavior with Co on samples which only distinguish by the contact metal. Thus, the thermally grown SiN layers are a useful method suppress Fermi level pinning and enable reconfigurable contacts by choosing an appropriate metal.

Effect of Silicon Surface Treatments on Thin Silicon Nitride Growth

1992 ◽  
Vol 284 ◽  
Author(s):  
Makoto Nakamura ◽  
Yoshio Kikuchi ◽  
Masahiro Kuwamura ◽  
Masamichi Yoshida
Keyword(s):  
Silicon Nitride ◽  
Silicon Surface ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Dielectric Films ◽  
Native Oxide ◽  
Pressure Chemical ◽  
Initial Silicon ◽  
Thin Silicon ◽  
Thin Dielectric Films

ABSTRACTUltra thin silicon nitride films have been indispensable in high density memory devices as a dielectric. We investigated the effect of the silicon surface state on initial silicon nitride growth process, we have used X-ray Photoelectron spectrometry (XPS), Secondary ion mass spectrometry(SIMS), and Capacitance-Voltage(C-V) characteristics. The results of our study show that the fluorine on silicon surface influences initial silicon nitride growth. The presence of fluorine delays low pressure chemical vapor deposition(LPCVD) silicon nitride growth as well as restraining native oxide growth at the silicon nitride/silicon substrate interface. We propose that it is a key process of thin dielectric films deposition to control fluorine on silicon surface.

ChemInform Abstract: VERY THIN SILICON NITRIDE FILMS GROWN BY DIRECT THERMAL REACTION WITH NITROGEN

1978 ◽  
Vol 9 (28) ◽  
Author(s):  
T. ITO ◽  
S. HIJIYA ◽  
T. NOZAKI ◽  
H. ARAKAWA ◽  
M. SHINODA ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Thermal Reaction ◽  
Silicon Nitride Films ◽  
Thin Silicon

Comparison of Pulsed Laser and Furnace Annealing of Nitrogen Implanted Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
T. P. Smith ◽  
P. J. Stiles ◽  
W. M. Augustyniak ◽  
W. L. Brown ◽  
D. C. Jacobson ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Semiconductor Device ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Nitride Layer ◽  
High Dose ◽  
Infrared Transmission ◽  
Furnace Annealing

ABSTRACTFormation of buried insulating layers and redistribution of impurities during annealing are important processes in new semiconductor device technologies. We have studied pulsed ruby laser and furnace annealing of high dose (D>1017 N/cm2) 50 KeV nitrogen implanted silicon. Using He Back scattering and channeling, X-ray diffraction, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffusion, impurity segregation and nitride formation. As has been previously reported, during furnace annealing at or above 1200C nitrogen redistributes and forms a polycrystalline silicon nitride (Si3N4 ) layer. [1–4] In contrast, pulsed laser annealing produces a buried amorphous silicon nitride layer filled with voids or bubbles below a layer of polycrystalline silicon.

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