Effect of Silicon Surface Treatments on Thin Silicon Nitride Growth

1992 ◽  
Vol 284 ◽  
Author(s):  
Makoto Nakamura ◽  
Yoshio Kikuchi ◽  
Masahiro Kuwamura ◽  
Masamichi Yoshida
Keyword(s):  
Silicon Nitride ◽  
Silicon Surface ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Dielectric Films ◽  
Native Oxide ◽  
Pressure Chemical ◽  
Initial Silicon ◽  
Thin Silicon ◽  
Thin Dielectric Films

ABSTRACTUltra thin silicon nitride films have been indispensable in high density memory devices as a dielectric. We investigated the effect of the silicon surface state on initial silicon nitride growth process, we have used X-ray Photoelectron spectrometry (XPS), Secondary ion mass spectrometry(SIMS), and Capacitance-Voltage(C-V) characteristics. The results of our study show that the fluorine on silicon surface influences initial silicon nitride growth. The presence of fluorine delays low pressure chemical vapor deposition(LPCVD) silicon nitride growth as well as restraining native oxide growth at the silicon nitride/silicon substrate interface. We propose that it is a key process of thin dielectric films deposition to control fluorine on silicon surface.

The Effects of Chemical Vapor Cleaning Chemistries on Silicon Surfaces

1993 ◽  
Vol 318 ◽  
Author(s):  
S.E. Beck ◽  
A.G. Gilicinski ◽  
B.S. Felker ◽  
J.G. Langan ◽  
D.A. Bohling ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Plasma Treatment ◽  
Silicon Surface ◽  
Chemical Vapor ◽  
Silicon Surfaces ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Thin Silicon

ABSTRACTThis study explores the effects of two chemical vapor cleaning chemistries on silicon surfaces. The silicon surfaces are not significantly roughened by exposure to either process. Trace amounts of fluorine are found on the surfaces exposed to 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (HFAC). A thin silicon nitride film forms on the silicon surface as a result of exposure to the HMDS process and is attributed to the H2/N2 plasma treatment used in the first step of the process.

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

2016 ◽  
Vol 119 (14) ◽  
pp. 145702 ◽  
Author(s):  
Pramod Reddy ◽  
Shun Washiyama ◽  
Felix Kaess ◽  
M. Hayden Breckenridge ◽  
Luis H. Hernandez-Balderrama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Band Offsets ◽  
Pressure Chemical

Dissolution Behavior of Silicon Nitride Thin Films in a Simulated Ocular Environment

2020 ◽  
Author(s):  
Christoph Schade ◽  
Alex Phan ◽  
Kevin Joslin ◽  
Phuong Truong ◽  
Frank Talke
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Saline Solution ◽  
Protective Layer ◽  
Chemical Vapor ◽  
Dissolution Behavior ◽  
Mems Devices ◽  
Pressure Chemical ◽  
Functional Membrane

Abstract The time dependent dissolution of silicon nitride is studied in a simulated eye environment (controlled saline solution) as a function of temperature and pressure. Silicon nitride films manufactured by plasma-enhanced chemical vapor deposition (PECVD) and low-pressure chemical vapor deposition (LPCVD), respectively, were tested. The results revealed that both film types showed evidence of dissolution i.e., the films dissolved in the saline solution over time. At 37°C, PECVD and LPCVD silicon nitride membranes dissolved at a rate of 1.3 nm/day and 0.3 nm/day, respectively. It was found that at 23°C, the dissolution rate of the PECVD samples reduced to just 0.2 nm/day. Dissolution was not observed in samples tested in deionized water at 37°C. Titanium oxide layers (TiO2) were tested as protective layers to stop the dissolution. The results are important for implantable MEMS devices where silicon nitride is used as a functional membrane or as a protective layer.

A Study of Nucleation and Growth in MOCVD: The Growth of Thin Films of Alumina

2000 ◽  
Vol 648 ◽  
Author(s):  
M.P. Singh ◽  
S. Mukhopadhayay ◽  
Anjana Devi ◽  
S.A. Shivashankar
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Film Growth ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Cross Sectional ◽  
Alumina Films ◽  
Pressure Chemical

AbstractWe have studied the nucleation and growth of alumina by metalorganic chemical vapor deposition (MOCVD). The deposition of alumina films was carried out on Si(100) in a horizontal, hot-wall, low pressure chemical vapor deposition (CVD) reactor, using aluminum acetylacetonate{Al(acac)3}as the CVD precursor. We have investigated growth of alumina films as a function of different CVD parameters such as substrate temperature and total reactor pressure during film growth. Films were characterized by optical microscopy, X-ray diffractometry (XRD), scanning electron microscopy (SEM), cross-sectional SEM, and secondary ion mass spectrometry (SIMS) compositional depth profiling. The chemical analysis reveals that the carbon is present throughout the depth of the films.

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