Formation of High-Quality Ag-Based Ohmic Contact to p-Type GaN for UV LEDs Using a Tin-Zinc Oxide Interlayer

2005 ◽  
Vol 8 (10) ◽  
pp. G280 ◽  
Author(s):  
Hyun-Gi Hong ◽  
Woong-Ki Hong ◽  
Keun-Yong Ban ◽  
Takhee Lee ◽  
Tae-Yeon Seong ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Ohmic Contact ◽  
High Quality ◽  
P Type ◽  
Uv Leds

Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs

2010 ◽  
Author(s):  
T. Passow ◽  
R. Gutt ◽  
M. Maier ◽  
W. Pletschen ◽  
M. Kunzer ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
P Type ◽  
Uv Leds

Morphological study of the Al–Ti ohmic contact to p-type SiC

2002 ◽  
Vol 46 (5) ◽  
pp. 689-693 ◽  
Author(s):  
S.E. Mohney ◽  
B.A. Hull ◽  
J.Y. Lin ◽  
J. Crofton
Keyword(s):  
Ohmic Contact ◽  
Morphological Study ◽  
P Type

Ohmic contact to nonpolara-plane p-type GaN using Ni/Au

2014 ◽  
Vol 53 (5S3) ◽  
pp. 05HA04 ◽  
Author(s):  
Jae-Kwan Kim ◽  
Dong-min Lee ◽  
Sung-Nam Lee ◽  
Keun-Man Song ◽  
Jae-Sik Yoon ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
P Type

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Ion Beam Assisted Deposition ◽  
P Type

Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si0.8Ge0.2

2005 ◽  
Vol 493 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
J.D. Hwang ◽  
W.T. Chang ◽  
K.H. Hseih ◽  
G.H. Yang ◽  
C.Y. Wu ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Ohmic Contact ◽  
Indium Tin Oxide ◽  
P Type

Low-temperature p-type ohmic contact to WSe2 using p+-MoS2/WSe2 van der Waals interface

2020 ◽  
Vol 117 (15) ◽  
pp. 153101
Author(s):  
Kei Takeyama ◽  
Rai Moriya ◽  
Kenji Watanabe ◽  
Satoru Masubuchi ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Van Der Waals ◽  
P Type

The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride.

1999 ◽  
Vol 595 ◽  
Author(s):  
P. Ruterana ◽  
G. Nouet ◽  
Th. Kehagias ◽  
Ph. Komninou ◽  
Th. Karakostas ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electrical Properties ◽  
Film Thickness ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Epitaxial Relationship ◽  
Si Doped ◽  
P Type ◽  
20 Nm

AbstractWhen the stoichiometric TiN was deposited directly on GaN, we obtained columnar TiN grains of 5-20 nm section which cross the whole film thickness and are rotated mostly around the [111] axis. The conventional epitaxial relationship is obtained and no amorphous patches are observed at the interface. The deposition of TiN on Si doped GaN layers lead to the formation of an ohmic contact, whereas we obtain a rectifying contact on p type layers.

High-Quality, Ultraconformal Aluminum-Doped Zinc Oxide Nanoplasmonic and Hyperbolic Metamaterials

Small ◽  
2015 ◽  
Vol 12 (7) ◽  
pp. 892-901 ◽  
Author(s):  
Conor T. Riley ◽  
Joseph S. T. Smalley ◽  
Kirk W. Post ◽  
Dimitri N. Basov ◽  
Yeshaiahu Fainman ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
High Quality ◽  
Hyperbolic Metamaterials ◽  
Aluminum Doped Zinc Oxide
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